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High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft=170GHz and fmax=253GHz |
| JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Hai2, QI Ming2 |
| 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,Shanghai 200050 |
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| Cite this article: |
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JIN Zhi, SU Yong-Bo, CHENG Wei et al 2008 Chin. Phys. Lett. 25 2686-2689 |
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Abstract The layer structure of InGaAs/InP double heterojunction bipolar transistor (DHBT) is designed to enhance the frequency performance and breakdown voltage. The composition-graded base structure is used to decrease the base transit time. The InGaAs setback layer and two highly doped InGaAsP layers are used to eliminate the conduction band spike of the collector. The submicron-emitter InGaAs/InP DHBT is fabricated successfully. The base contact resistance is greatly decreased by optimization of contact metals. The breakdown voltage is more than 6V. The current gain cutoff frequency is as high as 170GHz and the maximum oscillation frequency reached 253GHz. The DHBT with such high performances can be used to make W-band power amplifier.
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| Keywords:
85.30.Pq
71.55.Eq
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Received: 17 March 2008
Published: 26 June 2008
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