| Original Articles |
|
|
|
|
Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application |
| WANG Xiang, HUANG Jian, DING Hong-Lin, ZHANG Xian-Gao, YU Lin-Wei, HUANG Xin-Fan, LI Wei, CHEN Kun-Ji |
| National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
|
| Cite this article: |
|
WANG Xiang, HUANG Jian, DING Hong-Lin et al 2008 Chin. Phys. Lett. 25 2690-2693 |
|
|
|
Abstract An a-SiNx/nanocrystalline silicon [(nc-Si)/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition (PECVD) system at low temperature (250°C). The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2×1011cm-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNx insulator layer are obtained. The density of interface state at the midgap is calculated to be 1×1010cm-2eV-1 from the quasistatic and high frequency C-V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage (C-V) measurement at room temperature. An
ultra-large hysteresis is observed in the C-V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.
|
| Keywords:
85.35.Be
73.20.Hb
73.63.Kv
|
|
|
Received: 22 March 2008
Published: 26 June 2008
|
|
| PACS: |
85.35.Be
|
(Quantum well devices (quantum dots, quantum wires, etc.))
|
| |
73.20.Hb
|
(Impurity and defect levels; energy states of adsorbed species)
|
| |
73.63.Kv
|
(Quantum dots)
|
|
|
|
|
|
[1] Tiwari S, Rama F, Hanafi H, Hartstein A, Crabbe E F andChan K 1996 Appl. Phys. Lett. 68 1377
[2] Kwon Y H, Park C J, Lee W C, Fu D J, Shon Y, Kang T W,Hong C Y, Cho H Y and Wang K L 2002 Appl. Phys. Lett. 80 2502
[3] Tiwari S, Rama F, Chan K, Shi L and Hanafi H 1996 Appl. Phys. Lett. 69 1232
[4] Choi S, Yang H, Chang M, Baek S and Hwang H 2005 Appl. Phys. Lett. 86 251901
[5] Ng C Y, Chen T P, Yang M, Yang J B, Ding L, Li C M, Du Aand Trigg A 2006 IEEE Trans. Electron. Devices 53 663
[6] Wu L C, Dai M, Huang X F, Li W and Chen K J 2004 J.Vac. Sci. Technol. B 22 678
[7] Nicollian E H and Brews J R 1982 MOS Physics andTechnology (New York: Wiley)
[8] Harris H, Biswas N, Temkin H and Gangopadhyay S 2001 J. Appl. Phys. 90 5825
[9] Biswas N, Harris H R, Wang X, Celebi G, Temkin H andGangopadhyay S 2001 J. Appl. Phys. 89 4417
[10] Schroder D K 1990 Semiconductor Material and DeviceCharacterization (New York: Wiley)
[11] Berglund C N 1966 IEEE Trans. Electron Devices 13 701
[12] Hill W A and Coleman C C 1980 Solid-State Electron. 23 987
[13] Huang S, Banerjee S, Tung R T and Oda S 2003 J.Appl. Phys. 93 576
[14] Dai M, Chen K, Huang X F, Wu L C and Chen K J 2004 J. Appl. Phys. 95 640
[15] Shi Y, Saito K, Ishikuro H and Hiramoto T 1998 J.Appl. Phys. 84 2358 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
