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Noise Characteristics of Optocouplers on Neutron Radiation |
| LI Ying-Hui1,2, CHEN Chun-Xia2, LIU Yong-Zhi1, JIANG Cheng2, ZOU Ze-Ya2, OU Yi2, LI Zu-An2 |
| 1School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 6100542China Electronics Technology Group Corporation No 44 Research Institute, Chongqing 400060 |
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| Cite this article: |
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LI Ying-Hui, CHEN Chun-Xia, LIU Yong-Zhi et al 2008 Chin. Phys. Lett. 25 4093-4096 |
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Abstract Neutron dose radiation experiment is designed to study the optocoupler's displacement effects and the noise characteristics. The burst noise is introduced in optocouplers on neutron radiation, which is indicated from experiments. With the increasing neutron radiation the displacement defects in space-charge region increase, the scattering enhances and the noise signal mutations increase. All these represent the noise time series mutations, the random pulses and the increasing noise complexity. The burst noise becomes evident, and the power spectrum density, the characteristic frequency and the fractal dimension of time series of noise greatly increase.
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| Keywords:
71.22.+i
28.90.+i
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Received: 09 June 2008
Published: 25 October 2008
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| PACS: |
71.22.+i
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(Electronic structure of liquid metals and semiconductors and their Alloys)
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28.90.+i
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(Other topics in nuclear engineering and nuclear power studies)
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[1] Miyahira T F and Johnston A H 2002 IEEE Trans. Nucl.
Sci. 49 2868
[2] LaBel K A, Kniffin S D, Reed R A, Kim H S, Wert J L,Oberg
D L, Normand E, Johnston A H, Lum G K, Koga R, Crain S, Schwank J R,
Hash G L, Buchner S, Mann J,Simpkins L, Ordine M, Marshall C A,
Bryan M V, Seidleck C M, Nguyen L X,Carts M A, Ladbury R L and
Howard J W 2000 IEEE Radiation Effect Data Workshop p 123
[3] Johnston A H and Rax B G 2000 IEEE Trans. Nucl. Sci.
47 675
[4] Miyahira T F and Johnston A H 2002 IEEE Trans. Nucl.
Sci. 49 2868
[5] Rax B G and Lee C I 1996 IEEE Trans. Nucl. Sci.
43 3167
[6] Germanicus R, Dusseau L, Saigne F, Barde S, Ecoffet R,
Mion O, Calvel R, Fesquet J and Gasiot J 2002 IEEE Trans. Nucl.
Sci. 49 1421
[7]Chen C X, Du L, He L, Hu J, Huang X J and Wei T 2007
Acta Phys. Sin. 56 6674 (in Chinese)
[8] Dai Y S and Xu J S 2000 Solid-State Electron.
44 1495
[9] Jevtic M M 1995 Microelectron Reliability 35
1925
[10] Ursutiu D and Jones B K 1996 Semicond. Sci.
Technol. 24 1133
[11] Hu J, Du L, Zhuang Y Q, He L, Bao J L, Huang X J, Chen C
X and Wei T 2007 J. Semiconduct. 28 597
[12] Zhuang Y Q and Sun Q 1993 Noise and Its Minimizing
Technology in Semiconductor Devices (Beijing: National Defense
Industry) (in Chinese)
[13] Jaear R C and Brodersen A J 1970 IEEE Trans.
Electron. Devices 17 128
[14] Cao J Z 1993 Semiconductor Material Radiation
Effection (Beijing: Science) (in Chinese)
[15] Bao J L, Zhuang Y Q, Du L, Wu Y and Ma Z F 2005 J.
Semiconduct. 26 1208
[16] Hsu S 1970 Solid-State Electron. 13 1055
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