| Original Articles |
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Photoluminescence of SiOx Thin Films After Annealing
at Various Temperatures |
| FANG Ying-Cui1;LI Lu-Ying2;ZHAO You-Yuan2;Qi Le-Jun2;LI Wei-Qing2;ZHANG Zhuang-Jian1;LU Ming2 |
| 1Department of Materials Science, Fudan University, Shanghai 200433
2Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433 |
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| Cite this article: |
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FANG Ying-Cui, LI Lu-Ying, ZHAO You-Yuan et al 2003 Chin. Phys. Lett. 20 2042-2044 |
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Abstract We study photoluminescence (PL) of SiOx (0< x <2) thin films after annealing at temperatures in the range of 700-1100°C. The SiOx thin films were prepared by evaporation of SiO powder onto the substrate of Si(100). Two PL emission structures were observed in the measuring range of 580 -755 nm. The one centered around ～ 730 nm was confirmed to be due to Si nanocrystals. The origin for the other one spanning the range of 580-650 nm was investigated by using hydrogen and oxygen passivations, and by short time annealing at 1100°C followed by hydrogenation. Our results support the model of structural defects in SiO2 matrix for the origin of the 580-650 nm PL peak.
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| Keywords:
78.55.-m
73.63.Bd
78.68.+m
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Published: 01 November 2003
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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73.63.Bd
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(Nanocrystalline materials)
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78.68.+m
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(Optical properties of surfaces)
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