Initial Growth of Thin Films with Low Nucleus Density and Linear Lateral Growth Rate on a Substrate Surface

Chin. Phys. Lett.

2001, Vol. 18

Issue (8): 1135-1137 DOI:

Original Articles

Initial Growth of Thin Films with Low Nucleus Density and Linear Lateral Growth Rate on a Substrate Surface

SHAO Qing-Yi^1,2;FANG Rong-Chuan¹;ZHU Kai-Gui¹;LIAO Yuan¹;XUE Zeng-Quan²

¹Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026 ²Department of Electronics, Peking University, Beijing 100871

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SHAO Qing-Yi, FANG Rong-Chuan, ZHU Kai-Gui et al 2001 Chin. Phys. Lett. 18 1135-1137

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Abstract Based on corrected rate equations, the kinetics is revealed for initial growth of thin films with low nucleus density and linear lateral growth rate on a substrate surface. In this case, the mobility and coalescence terms in rate equations are neglected, and the coverage term takes a dominant role. All the calculated results are in agreement with experimental data. These results introduce a new scaling in the case of dominant coverage, which is different from the those in the case of coalescence or mobility in a dominant role.

Keywords: 81.15.Aa 68.55.Jk 81.15.Kk

Published: 01 August 2001

PACS:	81.15.Aa	(Theory and models of film growth)
	68.55.Jk
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I8/01135

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	SHAO Qing-Yi
	FANG Rong-Chuan
	ZHU Kai-Gui
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	XUE Zeng-Quan

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