Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure
A. John Peter**, Chang Woo Lee
Department of Chemical Engineering and Green Energy Center, College of Engineering, Kyung Hee University, 1 Seochun, Gihung, Yongin, Gyeonggi 446-701, S. Korea
Abstract：Photo-induced spin dependent electron transmission through a narrow gap InSb/InGaxSb1?x semiconductor symmetric well is theoretically studied using transfer matrix formulism. The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium. Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration.
(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
引用本文:
. [J]. Chin. Phys. Lett., 2012, 29(11): 117201-117201.
A. John Peter, Chang Woo Lee. Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure. Chin. Phys. Lett., 2012, 29(11): 117201-117201.
2012, Vol. 29 
