摘要A spin device with three normal metal leads via triple quantum dot in the presence of Rashba spin-orbit interaction is proposed, which is free from magnetic field or magnetic material. Using nonequilibrium Green's function technique, we investigate the spin current through the three-quantum-dot device. It is found that the spin current can be affected by the strength of the Rashba spin-orbit interaction, Coulomb interaction, the energy of the quantum dot and the bias voltage of the lead. The periodic oscillation of spin current can be controlled by tuning the Rashba spin-orbit interaction.
Abstract：A spin device with three normal metal leads via triple quantum dot in the presence of Rashba spin-orbit interaction is proposed, which is free from magnetic field or magnetic material. Using nonequilibrium Green's function technique, we investigate the spin current through the three-quantum-dot device. It is found that the spin current can be affected by the strength of the Rashba spin-orbit interaction, Coulomb interaction, the energy of the quantum dot and the bias voltage of the lead. The periodic oscillation of spin current can be controlled by tuning the Rashba spin-orbit interaction.
LI Jin-Liang;LI Yu-Xian. Spin Current Through Triple Quantum Dot in the Presence of Rashba Spin-Orbit Interaction[J]. 中国物理快报, 2010, 27(5): 57202-057202.
LI Jin-Liang, LI Yu-Xian. Spin Current Through Triple Quantum Dot in the Presence of Rashba Spin-Orbit Interaction. Chin. Phys. Lett., 2010, 27(5): 57202-057202.
[1] Cao X F, Shi Y M, Song X L and Zhou S P 2004 Phys. Rev. B 70 235341 [2] Li Y X, Choi H Y, Lee H W and Liu J J 2007 J. Appl. Phys. 101 103918 [3] Kubala B and König J 2002 Phys. Rev. B 65 245301 [4] Pan H and Lin T H 2006 Phys. Rev. B 74 235312 [5] Adourian A S, Livermore C, Westervelta R M, Campman K L and Gossard A C 1999 Appl. Phys. Lett. 75 424 [6] Chi F and Li S S 2005 J. Appl. Phys. 97 123704 [7] Lü H F and Guo Y 2007 Phys. Rev. B 76 045120 [8] Entin-Wohlman O, Aharony A, Imry Y and Levinson Y 2002 J. Low. Temp. Phys. 126 1251 [9] Orellana P A, Ladron de Guevara M L and Claro F 2004 Phys. Rev. B 70 233315 [10] Ji Y, Heiblum M, Sprinzak D, Mahalu D and Shtrikman H 2000 Science 290 779 [11] Gerland U, Delft J V, Costi T A and Oreg Y 2000 Phys. Rev. Lett. 84 3710 [12] López R, Aguado R and Platero G 2002 Phys. Rev. Lett. 89 136802 [13] Li S S, Chang K and Xia J B 2003 Phys. Rev. B 68 245306 [14] Wolf S A et al 2001 Science 294 1488 [15] Schmidt G et al 2001 Phys. Rev. B 64 121202(R) [16] Murakami S, Nagaosa N and Zhang S C 2003 Science 301 1348 [17] Kato Y K, Myers R C, Gossard A C and Awschalom D D 2004 Science 306 1910 [18] Datta S and Das B 1990 Appl. Phys. Lett. 56 665 Wang B G, Wang J and Guo H 2003 Phys. Rev. B 67{092408} [19] Chi F and Zheng J 2008 Appl. Phys. Lett. 92 062106 [20] Lü H F and Guo Y 2007 Appl. phys. Lett. 91 092128 [21] Li Y X 2008 Chin. Phys. Lett. 25 3739 [22] Chi F and Yuan X Q 2009 Chin. Phys. Lett. 26 097301 [23] Cuevas J C, Martín-Rodero A and Yeyati A L 1996 Phys. Rev. B 54 7366 [24] Yeyati A L, Cuevas J C, López Dávalos A and Martín-Rodero A 1999 Phys. Rev. B 55 R6137 [25] Pan H, Lin T H and Yu D 2004 Phys. Rev. B 70 245412 [26] Sun Q F, Wang J and Lin T H 2000 Phys. Rev. B 62 648 [27] Sun Q F, Wang J and Guo H 2005 Phys. Rev. B 71 165310 [28] Haug H and Jauho A P 1998 Quantum Kinetics in Transport and Optics of Semiconductors (Berlin: Springer)
2010, Vol. 27 
