Spin-Selective Transport of Electron in a Quantum Dot under Magnetic Field
LI Bo-Xin1, ZHENG Jun2, CHI Feng3
1College of New Energy, Bohai University, Jinzhou 121013 2SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3College of Engineering, Bohai University, Jinzhou 121013
Abstract：We study electronic spin-polarised transport in a system composed of a quantum dot (QD) connected to one normal metal electrode and one ferromagnetic one. The electrical current of each spin component and the spin accumulation on the QD are calculated by using the nonequilibrium Green's function method. We find that in the Coulomb blockade regime, the current spin polarisation can reach 100% under a strong magnetic field. Meanwhile, the spin accumulation on the QD approaches to unit, and thus the dot is occupied by electrons of one certain spin orientation. The system can operate as a spin injector from a normal metal reservoir to a semiconductor material, and may find real usage in solid state quantum information processes.
(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
引用本文:
. [J]. 中国物理快报, 2012, 29(10): 107302-107302.
LI Bo-Xin, ZHENG Jun, CHI Feng. Spin-Selective Transport of Electron in a Quantum Dot under Magnetic Field. Chin. Phys. Lett., 2012, 29(10): 107302-107302.
2012, Vol. 29 
