摘要Both the peak position and linewidth in the photoluminescence spectrum of the InAs/GaAs quantum dots usually vary in an anomalous way with increasing temperature. Such anomalous optical behaviour is eliminated by inserting an In0.2Ga0.8As quantum well below the quantum dot layer in molecular beam epitaxy. The insensitivity of the photoluminescence spectra to temperature is explained in terms of the effective carrier redistribution between quantum dots through the In0.2Ga0.8As quantum well.
Abstract：Both the peak position and linewidth in the photoluminescence spectrum of the InAs/GaAs quantum dots usually vary in an anomalous way with increasing temperature. Such anomalous optical behaviour is eliminated by inserting an In0.2Ga0.8As quantum well below the quantum dot layer in molecular beam epitaxy. The insensitivity of the photoluminescence spectra to temperature is explained in terms of the effective carrier redistribution between quantum dots through the In0.2Ga0.8As quantum well.
LIANG Zhi-Mei;JIN Can;JIN Peng;WU Ju;WANG Zhan-Guo. Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well[J]. 中国物理快报, 2009, 26(1): 17802-017802.
LIANG Zhi-Mei, JIN Can, JIN Peng, WU Ju, WANG Zhan-Guo. Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well. Chin. Phys. Lett., 2009, 26(1): 17802-017802.
[1] Bimberg D, Grundmann M and Ledentsov N N 1999 QuantumDot Heterostructures (Chichester: Wiley) [2] Lin R M, Cheng C C, Shen H T and Nee T E 2004 J. Vac.Sci. Technol. A 22 891 [3] Lubyshev D I, Gonz\'{alez-Borrero P P, Marega E,Petitprez E, Scala N L and Basmaji P 1996 Appl. Phys. Lett. 68 205 [4] Xu Z Y, Lu Z D, Yang X P, Yuan Z L, Zheng B Z, Xu J Z, GeW K, Wang Y, Wang J and Chang L L 1996 Phys. Rev. B 5411528 [5] Brusaferri L, Sanguinetti S, Grilli E, Guzzi M, BignazziA, Bogani F, Carraresi L, Colocci M, Bosacchi A, Frigeri P andFranchi S 1996 Appl. Phys. Lett. 69 3354 [6] Lee H, Yang W and Sercel P C 1997 Phys. Rev. B 55 9757 [7] Sanguinetti S, Mano T, Oshima M, Tateno T, Wakaki M andKoguchi N 2002 Appl. Phys. Lett. 81 3067 [8] Mano T, Watanabe K, Tsukamoto S, Koguchi N, Fujioka H,Oshima M, Lee C, Leem J, Lee H J and Noh S K 2000 Appl. Phys.Lett. 76 3543 [9] Song J D, Park Y M, Shin J C, Lim J G, Park Y J, Choi W J,Han I K, Lee J I, Kim H S and Park C G 2004 J. Appl. Phys. 96 4122 [10] Song J D, Park Y J, Han I K, Choi W J, Cho W J, Lee J I,Cho Y H and Lee J Y 2005 Physica E 86--90 26 [11] Cho N K, Ryu S P, Song J D, Choi W J and Lee J I 2006 Appl. Phys. Lett. 88 133104 [12] Yamaguchi K, Kaizu T, Yujobo K and Saito Y 2002 J.Cryst. Growth 237-239 1301 [13] Yang T, Tatebayashi J, Tsukamoto S, Nishioka M andArakawa Y 2004 Appl. Phys. Lett. 84 2817 [14] Sanguinetti S, Henini M, Grassi Alessi M, Capizzi M,Frigeri P and Franchi S 1999 Phys. Rev. B 60 8276 [15] Nee T E, Wu Y F, Lee J C and Wang J C 2007 Nanotechnology 6 492
2009, Vol. 26 
