| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111) |
| Xi-xia Tao1, Chun-lan Mo1,2**, Jun-lin Liu1,2, Jian-li Zhang1,2, Xiao-lan Wang1,2, Xiao-ming Wu1,2, Long-quan Xu1,2, Jie Ding1,2, Guang-xu Wang1,2, Feng-yi Jiang1 |
1National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330047
2Nanchang Yellow Green Lighting Company Limited, Nanchang 330047
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| Cite this article: |
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Xi-xia Tao, Chun-lan Mo, Jun-lin Liu et al 2018 Chin. Phys. Lett. 35 057303 |
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Abstract A blue emission originated from InGaN/GaN superlattice (SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells (QWs), revealing that sufficient holes have penetrated through the QWs into SLs far away from the p-type layer. In the V-pits embedded LEDs, hole transport has two paths: via the flat $c$-plane region or via the sidewalls of V-pits. It is proved that the holes in SLs are injected from the sidewalls of V-pits, and the transportation process is significantly affected by working temperature, current density, and the size of V-pits. Four motion possibilities are discussed when the holes flow via the sidewalls. All these may contribute to a better understanding of hole transport and device design.
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Received: 29 January 2018
Published: 30 April 2018
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| Fund: Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400600 and 2016YFB0400601, the National Natural Science Foundation of China under Grant Nos 61334001, 61604066, 21405076, 11604137, 11674147, 51602141 and 61704069, and the Key Research and Development Program of Jiangxi Province of China under Grant No 20165ABC28007. |
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| [1] | Wu X H, Elsass C R, Abare A, Mack M, Keller S, Petroff P M, DenBaars S P, Speck J S and Rosner S J 1998 Appl. Phys. Lett. 72 692 | | [2] | Wu X M, Liu J L and Jiang F Y 2015 J. Appl. Phys. 118 164504 | | [3] | Li C, Wu C, Hsu C, Lu C, Li H, Lu T and Wu Y 2016 AIP Adv. 6 55208 | | [4] | Quan Z J, Liu J L, Fang F, Wang G X and Jiang F Y 2015 J. Appl. Phys. 118 193102 | | [5] | Hangleiter A, Hitzel F, Netzel C, Fuhrmann D, Rossow U, Ade G and Hinze P 2005 Phys. Rev. Lett. 95 127402 | | [6] | Han S, Lee D, Shim H, Wook Lee J, Kim D, Yoon S, Sun Kim Y and Kim S 2013 Appl. Phys. Lett. 102 251123 | | [7] | Quan Z J, Wang L, Zheng C D, Liu J L and Jiang F Y 2014 J. Appl. Phys. 116 183107 | | [8] | Li Y, Yun F, Su Y, Liu S, Ding W and Hou X 2014 Jpn. J. Appl. Phys. 53 112103 | | [9] | Zhang J L, Liu J L, Pu Y, Fang W Q, Zhang M and Jiang F Y 2014 Chin. Phys. Lett. 31 037102 | | [10] | Wang G X, Tao X X, Liu J L and Jiang F Y 2015 Semiconductor Sci. & Technol. 30 15018 | | [11] | Wu X X, Liu J L, Quan Z J, Xiong C B, Zheng C D, Zhang J L, Mao Q H and Jiang F Y 2014 Appl. Phys. Lett. 104 221101 | | [12] | Bremers H, Hoffmann L, Fuhrmann D, Rossow U, Hangleiter A and Netzel C 2007 Phys. Rev. B 76 155322 | | [13] | Oh E, Park H and Park Y 1998 Appl. Phys. Lett. 72 70 | | [14] | Wang X H, Jia H Q, Guo L W and Xing Z G 2007 Appl. Phys. Lett. 91 4056 | | [15] | Jong-Il H A R H 2014 Appl. Phys. Express 7 71003 | | [16] | Takashi M A M Y 1999 Jan. J. Appl. Phys. 38 3976 | | [17] | Damilano B and Gil B 2015 J. Phys. D 48 | | [18] | David A, Grundmann M J, Kaeding J F, Gardner N F, Mihopoulos T G and Krames M R 2008 Appl. Phys. Lett. 92 160 | | [19] | Hager T, Binder N, Brüderl G, Eichler C, Avramescu A, Wurm T, Gomez-Iglesias A, Stojetz B, Tautz S, Galler B, Gerhard S, Zeisel R and Strauss U 2013 Appl. Phys. Lett. 102 231102 | | [20] | Cheng Y, Liu J, Tian A, Zhang F, Feng M, Hu W, Zhang S, Ikeda M, Li D, Zhang L and Yang H 2016 Appl. Phys. Lett. 109 92104 | | [21] | Zhang S, Xie E, Yan T, Yang W, Herrnsdof J, Gong Z, Watson I M, Gu E, Dawson M D and Hu X 2015 J. Appl. Phys. 118 125709 | | [22] | Le L C, Zhao D G, Jiang D S, Li L, Wu L L, Chen P, Liu Z S, Li Z C, Fan Y M, Zhu J J, Wang H, Zhang S M and Yang H 2012 Appl. Phys. Lett. 101 252110 | | [23] | Lee C, Chuo C, Dai J, Zheng X and Chyi J 2001 J. Appl. Phys. 89 6554 | | [24] | Zhang Z, Liu W, Tan S T, Ji Y, Wang L, Zhu B, Zhang Y, Lu S, Zhang X, Hasanov N, Sun X W and Demir H V 2014 Appl. Phys. Lett. 105 153503 | | [25] | Kim J, Ji M, Detchprohm T, Dupuis R D, Shervin S and Ryou J 2016 Phys. Status Solidi (a) 213 1296 |
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