Chin. Phys. Lett.  2018, Vol. 35 Issue (2): 026802    DOI: 10.1088/0256-307X/35/2/026802
Surface Structure and Reconstructions of HgTe (111) Surfaces
Xin-Yi Yang1, Guan-Yong Wang1, Chen-Xiao Zhao1, Zhen Zhu1, Lu Dong1, Ai-Min Li1, Yang-Yang Lv2, Shu-Hua Yao2, Yan-Bin Chen3, Dan-Dan Guan1,5, Yao-Yi Li1,5, Hao Zheng1,5, Dong Qian1,5, Canhua Liu1,5, Yu-Lin Chen4, Jin-Feng Jia1,5**
1Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240
2National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, Nanjing University, Nanjing 210093
3National Laboratory of Solid State Microstructures & Department of Physics, Nanjing University, Nanjing 210093
4Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, UK
5Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093
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Abstract HgTe (111) surface is comprehensively studied by scanning tunneling microscopy/spectroscopy (STS). In addition to the primitive $(1\times 1)$ hexagonal lattice, six reconstructed surface structures are observed: $(2\times 2)$, $2\times 1$, $4\times 1$, $3\times \sqrt{3}$, $2\sqrt{2}\times 2$ and $\sqrt{11}\times 2$. The $(2\times 2)$ reconstructed lattice maintains the primitive hexagonal symmetry, while the lattices of the other five reconstructions are rectangular. Moreover, the topographic features of the $3\times \sqrt{3}$ reconstruction are bias dependent, indicating that they have both topographic and electronic origins. The STSs obtained at different reconstructed surfaces show a universal dip feature with size $\sim $100 mV, which may be attributed to the surface distortion. Our results reveal the atomic structure and complex reconstructions of the cleaved HgTe (111) surfaces, which paves the way to understand the rich properties of HgTe crystal.
Received: 23 October 2017      Published: 23 January 2018
PACS:  68.35.B- (Structure of clean surfaces (and surface reconstruction)) (Semiconductors)  
  68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))  
  68.47.Fg (Semiconductor surfaces)  
Fund: Supported by the National Key Research and Development Program of China under Grant Nos 2016YFA0301003 and 2016YFA0300403, and the National Natural Science Foundation of China under Grant Nos 11521404, 11634009, U1632102, 11504230, 11674222, 11574202, 11674226, 11574201 and U1632272.
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Xin-Yi Yang, Guan-Yong Wang, Chen-Xiao Zhao et al  2018 Chin. Phys. Lett. 35 026802
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Xin-Yi Yang
Guan-Yong Wang
Chen-Xiao Zhao
Zhen Zhu
Lu Dong
Ai-Min Li
Yang-Yang Lv
Shu-Hua Yao
Yan-Bin Chen
Dan-Dan Guan
Yao-Yi Li
Hao Zheng
Dong Qian
Canhua Liu
Yu-Lin Chen
Jin-Feng Jia
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