Chin. Phys. Lett.  2017, Vol. 34 Issue (4): 047304    DOI: 10.1088/0256-307X/34/4/047304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors
Shi-Li Yan1, Zhi-Jian Xie1, Jian-Hao Chen1,3**, Takashi Taniguchi2, Kenji Watanabe2
1International Center for Quantum Materials, Peking University, Beijing 100871
2High Pressure Group, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
3Collaborative Innovation Center of Quantum Matter, Beijing 100871
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Shi-Li Yan, Zhi-Jian Xie, Jian-Hao Chen et al  2017 Chin. Phys. Lett. 34 047304
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Abstract The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronics, thermoelectric power generation and thermal imaging.
Received: 10 March 2017      Published: 21 March 2017
PACS:  73.63.-b (Electronic transport in nanoscale materials and structures)  
  73.20.At (Surface states, band structure, electron density of states)  
  85.35.-p (Nanoelectronic devices)  
Fund: Supported by the National Basic Research Program of China under Grant Nos 2013CB921900 and 2014CB920900, the National Natural Science Foundation of China under Grant No 11374021) (S. Yan, Z. Xie, J.-H. Chen). K.W. and T.T. acknowledge the support from the Elemental Strategy Initiative conducted by the MEXT, Japan and a Grant-in-Aid for Scientific Research on Innovative Areas "Science of Atomic Layers" from JSPS.
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http://cpl.iphy.ac.cn/10.1088/0256-307X/34/4/047304       OR      http://cpl.iphy.ac.cn/Y2017/V34/I4/047304
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Shi-Li Yan
Zhi-Jian Xie
Jian-Hao Chen
Takashi Taniguchi
Kenji Watanabe
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