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Ion Transportation Study for Thick Gas Electron Multipliers |
| WANG Bin-Long1, LIU Qian1**, LIU Hong-Bang1,2, ZHOU Xiao-Kang1, CHEN Shi1, GE Dong-Sheng5, HUANG Wen-Qian5, XIE Yi-Gang1,4, ZHENG Yang-Heng1, DONG Yang5, ZHANG Qiang5, JIAO Xin-Da5, WANG Jing5, LI Min5, CHANG Jie5 |
1School of Physics, University of Chinese Academy of Sciences, Beijing 100049
2Institute of Physics, Guangxi University, Nanning 530004
3Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049
4School of Physics and Technology, Wuhan University, Wuhan 430072
5Second Academy of China Aerospace Science and Industry Corporation, Beijing 100049
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| Cite this article: |
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WANG Bin-Long, LIU Qian, LIU Hong-Bang et al 2014 Chin. Phys. Lett. 31 122901 |
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Abstract Ion back flow(IBF) is defined as the ions that are generated during multiplication in a thick-gas-electron-multiplier (THGEM) detector flow along the electric field. In order to suppress the IBF effect, we study ion transportation for THGEMs with various high voltages and geometrical parameters. By measuring the currents of all the electrodes of the THGEMs, the effective gain and ion back flow ratio are calculated. The measurement and simulation results reveal that with a staggered triple THGEM configuration, ion back flow can be suppressed to 1% with a proper working high voltage. The gain of the staggered configuration is less than that of the aligned configuration by 5% under the same high voltage condition. The design and the results are presented.
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Published: 12 January 2015
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| PACS: |
29.40.Cs
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(Gas-filled counters: ionization chambers, proportional, and avalanche counters)
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95.55.Ka
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(X- and γ-ray telescopes and instrumentation)
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