| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Reduction of Efficiency Droop and Modification of Polarization Fields of InGaN-Based Green Light-Emitting Diodes via Mg-Doping in the Barriers |
| ZHANG Ning**, LIU Zhe, SI Zhao, REN Peng, WANG Xiao-Dong, FENG Xiang-Xu, DONG Peng, DU Cheng-Xiao, ZHU Shao-Xin, FU Bing-Lei, LU Hong-Xi, LI Jin-Min, WANG Jun-Xi |
Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083
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| Cite this article: |
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ZHANG Ning, LIU Zhe, SI Zhao et al 2013 Chin. Phys. Lett. 30 087101 |
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Abstract We demonstrate that the Mg-doping in barriers can partially screen the polarization fields of InGaN-based green light-emitting diodes. The photocurrent spectra show that the Mg-doping samples have smaller polarization fields and the blue shift of the peak with increasing current is observed. The reduction of polarization fields can be attributed to the screening of the impurity holes generated by the Mg atoms in the barriers. The efficiency droop is sensitive to the Mg-doping concentration in barriers, while the sample with Mg concentration of 5×1019 cm?3 exhibits the lowest efficiency degradation of 12.4% at a high injection current.
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Received: 12 April 2013
Published: 21 November 2013
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| PACS: |
71.55.Eq
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.Ea
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(III-V semiconductors)
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