| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Unipolar Resistive Switching Effects Based on Al/ZnO/P++-Si Diodes for Nonvolatile Memory Applications |
| SHI Wei1,2, TAI Qiang1, XIA Xian-Hai1, YI Ming-Dong1,2**, XIE Ling-Hai1, FAN Qu-Li1, WANG Lian-Hui1, WEI Ang1, HUANG Wei1,2** |
1Key Laboratory for Organic Electronics & Information Displays and Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210046
2Jiangsu-Singapore Joint Research Center for Organic/Bio Electronics & Information Displays, Nanjing 210046 |
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Abstract Al/ZnO/P++-Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400°C in air. The ON/OFF ratios of the resistance are in the range of 104–105 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P++-Si devices have potential applications in nonvolatile memory devices.
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Received: 08 March 2012
Published: 31 July 2012
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[1] Kim D C, Seo S, Ahn S E, Suh D S, Lee M J, Park B H, Yoo I K, Baek I G, Kim H J, Yim E K, Lee J E, Park S O, Kim H S, Chung U I, Moon J T and Ryu B I 2006 Appl. Phys. Lett. 88 202106
[2] Son J Y, Kim C H, Cho J H, Shin Y H and Jang H M 2010 ACS Nano 4 3288
[3] Yoshida C, Tsunoda K, Noshiro H and Sugiyama Y Appl. Phys. Lett. 91 223510
[4] Jeong H Y, Lee J Y and Choi S Y 2010 Adv. Funct. Mater. 20 3912
[5] Kim C H, Jang Y H, Hwang H J, Sun Z H, Moon H B and Cho J H 2009 Appl. Phys. Lett. 94 102107
[6] Chang J P and Lin Y S 2001 J. Appl. Phys. 90 2964
[7] Lin C Y, Wu C Y, Wu C Y, Hu C and Tsenga T Y 2007 J. Electrochem. Soc. 9 G189
[8] Wang Y, Liu Q, Lv H B, Long S B, Zhang S, Li Y T, Lian W T, Yang J H and Liu M 2011 Chin. Phys. Lett. 28 077201
[9] Lv H B, Zhou P, Fu X F, Yin M, Song Y L, Tang L, Tang T A and Lin Y Y 2008 Chin. Phys. Lett. 25 1087
[10] Sun B, Liu L F, Han D D, Wang Y, Liu X Y, Han R Q and Kang J F 2008 Chin. Phys. Lett. 25 2187
[11] Chang W Y, Lai Y C, Wu T B, Wang S F, Chen F and Tsai M J 2008 Appl. Phys. Lett. 92 022110
[12] Xu N, Liu L F, Sun X, Chen C, Wang Y, Han D D, Liu X Y, Han R Q, Kang J F and Yu B 2008 Semicond. Sci. Technol. 23 075019
[13] Yang Y C, Pan F, Liu Q, Liu M and Zeng F 2009 Nano Lett. 9 1636
[14] Lee S, Kim H, Yun D J, Rhee S W and Yong K 2009 Appl. Phys. Lett. 95 262113
[15] Mao Q N, Ji Z G and Xi J H 2010 J. Phys. D: Appl. Phys. 43 395104
[16] Yang Y C, Pan F, Zeng F and Liu M 2009 J. Appl. Phys. 106 123705
[17] Ahn S E, Lee M J, Park Y, Kang B S, Lee C B, Kim K H, Seo S, Suh D S, Kim D C, Hur J, Xianyu W, Stefanovich G, Yin H A, Yoo I K, Lee A H, Park J B and Park B H 2008 Adv. Mater. 20 924
[18] Jia Z, Liu Q, Wang L K and Ren T L 2010 Chin. Phys. Lett. 27 118503
[19] Zhou P, Li J, Chen L Y, Tang T A and Lin Y Y 2008 Chin. Phys. Lett. 25 3742
[20] Cao X, Li X M, Gao X D, Yu W D, Liu X J, Zhang Y W, Chen L D and Cheng X H 2009 J. Appl. Phys. 106 073723
[21] Lv H B, Yin M, Song Y L, Fu X F, Tang L, Zhou P, Zhao C H, Tang T A, Chen B A and Lin Y Y 2008 IEEE Electron Device Lett. 29 47
[22] Zhou P, Lv H B, Yin M, Tang L, Song Y L, Tang T A, Lin Y Y, Bao A, Wu A, Cai S, Wu H, Liang C and Chi M H 2008 J. Vac. Sci. Technol. B 26 1030
[23] Teixeira J M, Ventura J, Fermento R, Araujo J P, Sousa J B, Wisniowski P and Freitas P P 2009 J. Phys. D 42 105407
[24] Yi M D, Xie L H, Liu Y Y, Dai Y F and Huang J Y 2011 Chin. Phys. Lett. 28 017302
[25] Choi B J, Jeong D S, Kim S K, Rohde C, Choi S, Oh J H, Kim H J, Hwang C S, Szot K, Waser R, Reichenberg B and S Tiedke 2005 J. Appl. Phys. 98 033715
[26] Kim D C, Seo S, Ahn S E, Suh D -S, Lee M J, Park B -H, Yoo I K, Baek I G, Kim H -J, Yim E K, Lee J E, Park S O, Kim H S, Chung U -I, Moon J T and Ryu B I 2006 Appl. Phys. Lett. 88 202102
[27] Kwon D H, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M and Hwang C S 2010 Nature Nanotechnol. 5 148 |
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