Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer

doi:10.1088/0256-307X/28/12/128501

Chin. Phys. Lett.

2011, Vol. 28

Issue (12): 128501 DOI: 10.1088/0256-307X/28/12/128501

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer

CHEN Jun^1,2, FAN Guang-Han^1**, PANG-Wei², ZHENG Shu-Wen¹

¹Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631
²Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006

Cite this article:

CHEN Jun, FAN Guang-Han, PANG-Wei et al 2011 Chin. Phys. Lett. 28 128501

Download: PDF(545KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Optical properties of GaN-based light-emitting diodes (LEDs) are studied numerically by using AlGaN and InAlN electron-blocking layers (EBLs). Through the simulations of emission spectra, carrier concentration distribution, energy band, electrostatic field, internal quantum efficiency and output power, the results show that the LEDs with design of the InAlN EBL structure have a better performance over the original LEDs using an AlGaN EBL. The spectrum intensity and output power are enhanced significantly, and the efficiency droop of internal quantum efficiency is improved effectively with this design of InAlN EBL structure. It is proved that the strengths of carrier confinement and electron leakage current play a critical role in the performance of luminescence in LEDs.

Keywords: 85.60.Jb 85.50.-n 87.15.A- 78.60.Fi

Received: 13 August 2011 Published: 29 November 2011

PACS:	85.60.Jb	(Light-emitting devices)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/10.1088/0256-307X/28/12/128501 OR https://cpl.iphy.ac.cn/Y2011/V28/I12/128501

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	CHEN Jun
	FAN Guang-Han
	PANG-Wei
	ZHENG Shu-Wen

[1] Dai K H, Wang L S, Huang D X, Soh C B and Chua S J 2011 Chin. Phys. Lett. 28 098501
[2] Wu M, Zeng Y P, Wang J X and Hu Q 2011 Chin. Phys. Lett. 28 068502
[3] Pan Y B, Hao M S, Qi S L, Fang H and Zhang G Y 2010 Chin. Phys. Lett. 27 038503
[4] Sun Y J, Yu T J, Jia C Y, Chen Z Z, Tian P F, Kang X N, Lian G J, Huang S and Zhang G Y 2010 Chin. Phys. Lett. 27 127303
[5] Ruan J, Yu T J, Jia C Y, Tao R C, Wang Z G and Zhang G Y 2009 Chin. Phys. Lett. 26 087802
[6] Zhang Y Y and Fan G H 2011 Chin. Phys. B 20 048502
[7] Li Y L, Huang Y R and Lai Y H 2007 Appl. Phys. Lett. 91 181113
[8] Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507
[9] Schubert M F, Xu J, Kim J K, Schubert E F, Kim M H, Yoon S, Lee S M, Sone C, Sakong T and Park Y 2008 Appl. Phys. Lett. 93 041102
[10] Kim A Y, Go W, Steigerwald D A, Wierer J J, Gardner N F, Sun J, Stockman S A, Martin P S, Krames M R, Kern R S and Steranka F M 2001 Phys. Status Solidi A 188 15
[11] Rozhansky I V and Zakheim D A 2006 Phys. Status Solidi C 3 2160
[12] Rozhansky I V and Zakheim D A 2007 Phys. Status Solidi A 204 227
[13] Efremov A A, Bochkareva N I, Gorbunov R I, Larinovich D A, Rebane Y T, Tarkhin D V and Shreter Y G 2006 Semiconductors 40 605
[14] Shen Y C, Müller G O, Watanabe S, Gardner N F, Munkholm A and Krames M R 2007 Appl. Phys. Lett. 91 141101
[15] Gardner N F, Müller G O, Shen Y C, Chen G, Watanabe S, Götz W and Krames M R 2007 Appl. Phys. Lett. 91 243506
[16] Chichibu S F, Azuhata T, Sugiyama M, Kitamura T, Ishida Y, Okumurac H, Nakanishi H, Sota T and Mukai T 2001 J. Vac. Sci. Technol. B 19 2177
[17] Xie J, Ni X, Fan Q, Shimada R, Ozgur U and Morkoc H 2008 Appl. Phys. Lett. 93 121107
[18] Pope I A, Smowton P M, Blood P, Thomson J D, Kappers M J and Humphreys C J 2003 Appl. Phys. Lett. 82 2755
[19] Mánuel J M, Morales F M, Lozano J G, González D, García R, Lim T, Kirste L, Aidam R and Ambacher O 2010 Acta Mater. 58 4120
[20] Sugita K, Tanaka M, Sasamoto K, Bhuiyan A G, Hashimoto A and Yamamoto A 2011 J. Cryst. Growth 318 505
[21] Akazawa M, Gao B, Hashizume T, Hiroki M, Yamahata S and Shigekawa N 2011 J. Appl. Phys. 109 013703
[22] Carlin J F and Ilegems M 2003 Appl. Phys. Lett. 83 668
[23] Peng T, Piprek J, Qiu G, Olowolafe J O, Unruh K M, Swann C P and Schubert E F 1997 Appl. Phys. Lett. 71 2439
[24] Yamaguchi S, Kariya M, Nitta S, Kato H, Takeuchi T, Wetzel C, Amano H and Akasaki I 1998 J. Cryst. Growth 195 309
[25] Lukitsch M J, Danylyuk Y V, Naik V M, Huang C, Auner G W, Rimai L and Naik R 2001 Appl. Phys. Lett. 79 632
[26] Kim H J, Choi S, Kim S S, Ryou J H, Yoder P D, Dupuis R D, Fischer A M, Sun K, and Ponce F A 2010 Appl. Phys. Lett. 96 101102
[27] Gacevic Z, Garrido S F, Rebled J M, Estrade S, Peiro F, and Calleja E 2011 Appl. Phys. Lett. 99 031103
[28] Xie J Q, Ni X F, Wu M, Leach J H, Özgür Ü and Morkoç H 2007 Appl. Phys. Lett. 91 132116
[29] Choi S, Kim H J, Kim S S, Liu J P, Kim J, Ryou J H, Dupuis R D, Fischer A M and Ponce F A 2010 Appl. Phys. Lett. 96 221105
[30] APSYS by Crosslight Software Inc., Burnaby, Canada (http://www.crosslight.com)
[31] Kuo Y K, Chang J Y, Tsai M C and Yen S H 2009 Appl. Phys. Lett. 95 011116
[32] Piprek J and Nakamura S 2002 IEEE Proc. J Optoelectron. 149 145
[33] Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675
[34] Kuo Y K, Wang T H, Chang J Y and Tsai M C 2011 Appl. Phys. Lett. 99 091107

Related articles from Frontiers Journals

[1]	ZENG Chang, ZHANG Shu-Ming, WANG Hui, LIU Jian-Ping, WANG Huai-Bing, LI Zeng-Cheng, FENG Mei-Xin, ZHAO De-Gang, LIU Zong-Shun, JIANG De-Sheng, YANG Hui. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN**[J]. Chin. Phys. Lett., 2012, 29(1): 128501
[2]	LUO Bing-Cheng, CHEN Chang-Le, FAN Fei, JIN Ke-Xin. The Photovoltaic Properties of BiFeO₃La_0.7Sr_0.3MnO₃ Heterostructures**[J]. Chin. Phys. Lett., 2012, 29(1): 128501
[3]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 128501
[4]	YIN Yang, RAN Guang-Zhao, ZHANG Bin, QIN Guo-Gang . Photo- and Electro-Luminescence at 1.54µm from Er³⁺ in SiC:Er₂O₃ Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 128501
[5]	WU Meng, , ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang . Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate**[J]. Chin. Phys. Lett., 2011, 28(6): 128501
[6]	LIAN Jia-Rong, NIU Fang-Fang, LIU Ya-Wei, ZENG Peng-Ju . Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs**[J]. Chin. Phys. Lett., 2011, 28(4): 128501
[7]	QI Wen-Peng, LEI Xiao-Ling . DNA Conformational Variations Induced by Stretching 3'5'-Termini Studied by Molecular Dynamics Simulations**[J]. Chin. Phys. Lett., 2011, 28(4): 128501
[8]	WANG Jia-Xing, WANG Lai, HAO Zhi-Biao, LUO Yi . Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED**[J]. Chin. Phys. Lett., 2011, 28(11): 128501
[9]	FENG Lie-Feng, LI Yang, LI Ding, WANG Cun-Da, ZHANG Guo-Yi, YAO Dong-Sheng, LIU Wei-Fang, XING Peng-Fei . Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes**[J]. Chin. Phys. Lett., 2011, 28(10): 128501
[10]	LIANG Chun-Jun, ZOU Hui, HE Zhi-Qun, ZHANG Chun-Xiu, LI Dan, WANG Yong-Sheng. Polymer Light-Emitting Diode Using Conductive Polymer as the Anode Layer[J]. Chin. Phys. Lett., 2010, 27(9): 128501
[11]	DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou. UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate[J]. Chin. Phys. Lett., 2010, 27(8): 128501
[12]	GONG Yue-Feng, SONG Zhi-Tang, LING Yun, LIU Yan, LI Yi-Jin, FENG Song-Lin. Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials[J]. Chin. Phys. Lett., 2010, 27(8): 128501
[13]	QIAO Xian-Feng, CHEN Jiang-Shan, MA Dong-Ge. Comparative Study on Hole Transport in N,N'-bis(naphthalen-1-yl)-N,N'- bis(pheny) Benzidine and 4,4',4''-tri(N-carbazolyl)triphenylamine[J]. Chin. Phys. Lett., 2010, 27(8): 128501
[14]	GONG Yue-Feng, SONG Zhi-Tang, LING Yun, LIU Yan, LI Yi-Jin. Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling[J]. Chin. Phys. Lett., 2010, 27(6): 128501
[15]	WANG Wei, HUANG Bei-Ju, DONG Zan, LIU Hai-Jun, ZHANG Xu, GUAN Ning, CHEN Jin, GUO Wei-Lian, NIU Ping-Juan, CHEN Hong-Da. A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology[J]. Chin. Phys. Lett., 2010, 27(4): 128501

Viewed

Full text

Abstract