| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering |
| HUANG Hai-Qin1, SUN Jian2, LIU Feng-Juan1, ZHAO Jian-Wei1, HU Zuo-Fu1, LI Zhen-Jun1, ZHANG Xi-Qing1**, WANG Yong-Sheng1
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1Key Laboratory of Luminescence and Optical Information (Ministry of Education), Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044
2Beijing BOE Optoelectronics Technology CO., LTD, Beijing 100176
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| Cite this article: |
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HUANG Hai-Qin, SUN Jian, LIU Feng-Juan et al 2011 Chin. Phys. Lett. 28 128502 |
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Abstract We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors (TFTs). Low Ga-doped (0.7wt%) ZnO thin films were deposited on SiO2/p−Si substrates by rf magnetron sputtering. The GZO TFTs show a mobility of 1.76 cm2/V⋅s, an on/off ratio of 1.0×106, and a threshold voltage of 35 V. The time−dependent instability of the TFT is studied. The VTH shifts negatively. In addition, the device shows a decrease of the on/off ratio, mainly due to the increase of the off-current. The mechanisms of instability are discussed.
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| Keywords:
85.30.Tv
81.05.Dz
81.15.Cd
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Received: 27 July 2011
Published: 29 November 2011
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