Chin. Phys. Lett.  2011, Vol. 28 Issue (12): 128502    DOI: 10.1088/0256-307X/28/12/128502
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering
HUANG Hai-Qin1, SUN Jian2, LIU Feng-Juan1, ZHAO Jian-Wei1, HU Zuo-Fu1, LI Zhen-Jun1, ZHANG Xi-Qing1**, WANG Yong-Sheng1
1Key Laboratory of Luminescence and Optical Information (Ministry of Education), Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044
2Beijing BOE Optoelectronics Technology CO., LTD, Beijing 100176
Cite this article:   
HUANG Hai-Qin, SUN Jian, LIU Feng-Juan et al  2011 Chin. Phys. Lett. 28 128502
Download: PDF(614KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors (TFTs). Low Ga-doped (0.7wt%) ZnO thin films were deposited on SiO2/p−Si substrates by rf magnetron sputtering. The GZO TFTs show a mobility of 1.76 cm2/V⋅s, an on/off ratio of 1.0×106, and a threshold voltage of 35 V. The time−dependent instability of the TFT is studied. The VTH shifts negatively. In addition, the device shows a decrease of the on/off ratio, mainly due to the increase of the off-current. The mechanisms of instability are discussed.
Keywords: 85.30.Tv      81.05.Dz      81.15.Cd     
Received: 27 July 2011      Published: 29 November 2011
PACS:  85.30.Tv (Field effect devices)  
  81.05.Dz (II-VI semiconductors)  
  81.15.Cd (Deposition by sputtering)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/28/12/128502       OR      https://cpl.iphy.ac.cn/Y2011/V28/I12/128502
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
HUANG Hai-Qin
SUN Jian
LIU Feng-Juan
ZHAO Jian-Wei
HU Zuo-Fu
LI Zhen-Jun
ZHANG Xi-Qing
WANG Yong-Sheng
[1] Hirao T et al 2008 IEEE Trans. Electron. Devices 55 3136
[2] Park S H K et al 2009 Adv. Mater. 21 678
[3] Lim K M et al 2000 Microelectron. J. 31 641
[4] Aoyama T et al 1995 Appl. Phys. Lett. 66 3007
[5] Carcia P F et al 2003 Appl. Phys. Lett. 82 1117
[6] Zhao W et al 2010 Chin. Phys. Lett. 27 128504
[7] Yi M D et al 2011 Chin. Phys. Lett. 28 017302
[8] Fortunato E M C et al 2005 Adv. Mater. 17 590
[9] Kim J H et al 2008 Thin Solid Films 516 1529
[10] Avis C et al 2009 Electrochem. Solid State Lett. 12 J93
[11] Jang K, Park H, Jung S, Duy N V, Kim Y, Cho J, Choi H, Kwon T, Lee W, Gong D, Park S, Yi J, Kim D and Kim H 2010 Thin Solid Films 518 2808
[12] Park W J, Shin H S, Ahn B D, Kim G H, Lee S M, Kim K H and Kim H J 2008 Appl. Phys. Lett. 93 083508
[13] Verma V P, Kim D H, Jeon H, Jeon M and Choi W 2008 Thin Solid Films 516 8736
[14] Lu Z L, Zou W Q, Xu M X, Zhang F M and Du Y W 2009 Chin. Phys. Lett. 26 116102
[15] Bhosle V, Tiwari A and Narayan J 2006 Appl. Phys. Lett. 88 032106
[16] Liu F J, Zhang R, Hu Z F, Sun J, Huang H Q, Li Z J, Zhao J W, Yin P G, Guo L, Zhang X Q, and Wang Y S 2011 IEEE Trans. Plasma Sci. 39 700
[17] Huang H Q, Liu F J, Sun J, Zhao J W, Hu Z F, Li Z J, Zhang X Q and Wang Y S 2011 Appl. Surf. Sci. 257 10721
[18] Cho N G, Kim D H, Kim H G, Hong J M and Kim I D 2010 Thin Solid Films 518 2843
[19] Hoffman R L, Norris B J and Wager J F 2003 Appl. Phys. Lett. 82 733
[20] Lee S Y, Chang S and Lee J S 2010 Thin Solid Films 518 3030
[21] Zhang L, Li J, Zhang X W, Yu D B, Lin H P, Jiang X Y and Zhang Z L 2010 Curr. Appl. Phys. 10 1306
[22] Park J S, Jeong J K, Chung H J, Mo Y G and Kim H D 2008 Appl. Phys. Lett. 92 072104
[23] Kim KT, Lee K, Oh M S, Park C H and Im S 2009 Thin Solid Films 517 6345
[24] Barquinha P, Fortunato E, Gonçalves A, Pimentel A, Marques A, Pereira L and Martins R 2006 Superlatt. Microst. 39 319
Related articles from Frontiers Journals
[1] CHANG Jian-Guang,WU Chun-Bo,JI Xiao-Li**,MA Hao-Wen,YAN Feng,SHI Yi,ZHANG Rong. The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique[J]. Chin. Phys. Lett., 2012, 29(5): 128502
[2] XUE Bai-Qing,CHANG Hu-Dong,SUN Bing,WANG Sheng-Kai,LIU Hong-Gang**. The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors[J]. Chin. Phys. Lett., 2012, 29(4): 128502
[3] LU Li,CHANG Hu-Dong,SUN Bing,WANG Hong,XUE Bai-Qing,ZHAO Wei,LIU Hong-Gang**. Solid Phase Reactions of Ni-GaAs Alloys for High Mobility III–V MOSFET Applications[J]. Chin. Phys. Lett., 2012, 29(4): 128502
[4] WAN Qi-Jian, FENG Jie, GUO Gang. Crystallization Characteristics of SiNx-Doped SbTe Films for Phase Change Memory[J]. Chin. Phys. Lett., 2012, 29(3): 128502
[5] ZHU Yun, WANG Yue, WAN Peng-Fei, LI Hong-Yu, WANG Shou-Yu. Optical and Mechanical Properties of Transparent Conductive Al-Doped ZnO Films Deposited by the Sputtering Method[J]. Chin. Phys. Lett., 2012, 29(3): 128502
[6] DING Bin-Feng. Characterization of a ZnO Epilayer Grown on Sapphire by using Rutherford Backscattering/Channeling and X-Ray Diffraction[J]. Chin. Phys. Lett., 2012, 29(3): 128502
[7] BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 128502
[8] LI Shao-Juan, HE Xin, HAN De-Dong, SUN Lei, WANG Yi, HAN Ru-Qi, CHAN Man-Sun, ZHANG Sheng-Dong, **. Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors[J]. Chin. Phys. Lett., 2012, 29(1): 128502
[9] WU Wen-Juan**, WANG Zhan-Shan, ZHU Jing-Tao, ZHANG Zhong, WANG Feng-Li, CHEN Ling-Yan, ZHOU Hong-Jun, HUO Tong-Lin . Spectral Resolution Improvement of Mo/Si Multilayers[J]. Chin. Phys. Lett., 2011, 28(8): 128502
[10] LIU Sheng-Hou, CAI Yong**, GONG Ru-Min, WANG Jin-Yan, ZENG Chun-Hong, SHI Wen-Hua, FENG Zhi-Hong, WANG Jing-Jing, YIN Jia-Yun, Cheng P. Wen, QIN Hua, ZHANG Bao-Shun . Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure[J]. Chin. Phys. Lett., 2011, 28(7): 128502
[11] Kuang-Po HSUEH**, Shih-Tzung SU, Jun ZENG . Numerical Simulation of 4H-SiC Metal Semiconductor Field Transistors[J]. Chin. Phys. Lett., 2011, 28(7): 128502
[12] Seoung-Hwan Park**, Yong-Tae Moon, Jeong Sik Lee, Ho Ki Kwon, Joong Seo Park, Doyeol Ahn . Optical Gain Analysis of Graded InGaN/GaN Quantum-Well Lasers[J]. Chin. Phys. Lett., 2011, 28(7): 128502
[13] PAN Feng, QIAN Xian-Rui, HUANG Li-Zhen, WANG Hai-Bo, YAN Dong-Hang** . Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer[J]. Chin. Phys. Lett., 2011, 28(7): 128502
[14] WEI Meng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 128502
[15] REN Guo-Zhong, LIU Yang, MA Hong-An, SU Tai-Chao, LIN Le-Jing, DENG Le, JIANG Yi-Ping, ZHENG Shi-Zhao, JIA Xiao-Peng** . Thermoelectric Properties of Te-Doped Ba0.32Co4Sb12−xTexPrepared at HPHT[J]. Chin. Phys. Lett., 2011, 28(4): 128502
Viewed
Full text


Abstract