Chin. Phys. Lett.  2010, Vol. 27 Issue (1): 018102    DOI: 10.1088/0256-307X/27/1/018102
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films
ZHANG Dong1,2, BAI Yi-Zhen1,2, QIN Fu-Wen1,2, BIAN Ji-Ming1, JIA Fu-Chao1,2, WU Zhan-Ling1,2, ZHAO Ji-Jun1,3, JIANG Xin2,4
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 1160242Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 1160243College of Advanced Science and Technology, Dalian University of Technology, Dalian 1160244Institute of Materials Engineering, University of Siegen, Paul-Bonatz-StraBe 9-11, D-57076 Siegen, Germany
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ZHANG Dong, BAI Yi-Zhen, QIN Fu-Wen et al  2010 Chin. Phys. Lett. 27 018102
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Abstract Prefer-oriented and fine grained polycrystalline GaN films are prepared by plasma enhanced metal organic chemical vapour deposition on nucleation surfaces of freestanding thick diamond films. The characteristics of the GaN films are characterized by x-ray diffraction, reflection high energy electron diffraction and atomic force microscopy. The results indicate that the structure and morphology of the films are strongly dependent on the deposition temperature. The most significant improvements in morphological and structural properties of GaN films are obtained under the proper deposition temperature of 400°C.
Keywords: 81.15.Gh. 68.55.J-      61.05.Cp     
Received: 25 September 2009      Published: 30 December 2009
PACS:  81.15.Gh. 68.55.J-  
  61.05.cp (X-ray diffraction)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/1/018102       OR      https://cpl.iphy.ac.cn/Y2010/V27/I1/018102
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ZHANG Dong
BAI Yi-Zhen
QIN Fu-Wen
BIAN Ji-Ming
JIA Fu-Chao
WU Zhan-Ling
ZHAO Ji-Jun
JIANG Xin

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