| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001) |
| FAN Ya-Ming1, ZHANG Xing-Wang1,2, YOU Jing-Bi1, YING Jie1, TAN Hai-Ren1, CHEN Nuo-Fu1 |
| 1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy Sciences, Beijing 1000832Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Hubei University, Wuhan 430062 |
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| Cite this article: |
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FAN Ya-Ming, ZHANG Xing-Wang, YOU Jing-Bi et al 2009 Chin. Phys. Lett. 26 056801 |
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Abstract Cubic boron nitride (c-BN) films were deposited on Si(001) substrates in an ion beam assisted deposition (IBAD) system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at χc=50% to 2.1 at χc=90%. Furthermore, the relationship between n and ρ for BN films can be described by the Anderson-Schreiber equation, and the overlap field parameter γ is determined to be 2.05.
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| Keywords:
68.55.Nq
81.05.Ea
78.66.Fd
81.15.Jj
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Received: 06 October 2008
Published: 23 April 2009
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| PACS: |
68.55.Nq
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(Composition and phase identification)
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81.05.Ea
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(III-V semiconductors)
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78.66.Fd
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(III-V semiconductors)
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81.15.Jj
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(Ion and electron beam-assisted deposition; ion plating)
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