| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Nonvolatile Memory Characteristics with Embedded High Density Ruthenium Nanocrystals |
| MAO Ping, ZHANG Zhi-Gang, PAN Li-Yang, XU Jun, CHEN Pei-Yi |
| Institute of Microelectronics, Tsinghua University, Beijing 100084Tsinghua National Laboratory of Information Science and Technology, Beijing 100084 |
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| Cite this article: |
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MAO Ping, ZHANG Zhi-Gang, PAN Li-Yang et al 2009 Chin. Phys. Lett. 26 056104 |
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Abstract Ruthenium (Ru) nanocrystals (NCs) embedded in SiO2 gate stacks are formed by rapid thermal annealing for the whole gate stacks and embedded in the memory structure, which is compatible with conventional CMOS technology. The devices exhibit a substantial and clockwise hysteresis in capacitance-voltage measurement. The Ru NCs exhibit high density (2×1012cm-2), small size (2-4nm) and good uniformity both in spatial distribution and morphology. The charging and long-term retention performances are explained by the Coulomb Blockade phenomena and the asymmetric electron tunnel barrier between the Ru NCs and the Si substrate, respectively.
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| Keywords:
61.46.Hk
81.07.Bc
73.40.Qv
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Received: 18 November 2008
Published: 23 April 2009
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| PACS: |
61.46.Hk
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(Nanocrystals)
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81.07.Bc
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(Nanocrystalline materials)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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