| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface |
| GENG Li1, MAGYARI-KOPE Blanka2, ZHANG Zhi-Yong3, NISHI Yoshio2 |
| 1Department of Microelectronics, Xi'an Jiaotong University, Xi'an 7100492Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA3Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA |
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| Cite this article: |
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GENG Li, MAGYARI-KOPE Blanka, ZHANG Zhi-Yong et al 2009 Chin. Phys. Lett. 26 037306 |
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Abstract A new method is proposed to modify the Schottky barrier height (SBH) for nickel silicide/Si contact. Chemical and electrical properties for NiSi2/Si interface with titanium, scandium and vanadium incorporation are investigated by first-principles calculations. The metal/semiconductor interface states within the gap region are greatly decreased, which is related to the diminutions of junction leakage when Ti-cap is experimentally used in nickel silicide/Si contact process. It leads to an unpinning metal/semiconductor interface. The SBH obeys the Schottky-Mott theory. Compared to Ti substitution, the SBH for electrons is reduced for scandium and increases for vanadium.
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| Keywords:
73.20.-r
73.30.+y
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Received: 13 October 2008
Published: 19 February 2009
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| PACS: |
73.20.-r
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(Electron states at surfaces and interfaces)
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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