| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Mott Gap Filling by Doping Electrons through Depositing One Sub-Monolayer Thin Film of Rb on Ca$_{2}$CuO$_{2}$Cl$_{2}$ |
| Han Li, Zhaohui Wang, Shengtai Fan, Huazhou Li, Huan Yang*, and Haihu Wen* |
| National Laboratory of Solid State Microstructures and Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China |
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Han Li, Zhaohui Wang, Shengtai Fan et al 2024 Chin. Phys. Lett. 41 057402 |
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Abstract Understanding the doping evolution from a Mott insulator to a superconductor probably holds the key to resolve the mystery of unconventional superconductivity in copper oxides. To elucidate the evolution of the electronic state starting from the Mott insulator, we dose the surface of the parent phase Ca$_{2}$CuO$_{2}$Cl$_{2}$ by depositing Rb atoms, which are supposed to donate electrons to the CuO$_{2}$ planes underneath. We successfully achieved the Rb sub-monolayer thin films in forming the square lattice. The scanning tunneling microscopy or spectroscopy measurements on the surface show that the Fermi energy is pinned within the Mott gap but close to the edge of the charge transfer band. In addition, an in-gap state appears at the bottom of the upper Hubbard band (UHB), and the Mott gap will be significantly diminished. Combined with the Cl defect and the Rb adatom/cluster results, the electron doping is likely to increase the spectra weight of the UHB for the double occupancy. Our results provide information to understand the electron doping to the parent compound of cuprates.
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Received: 26 February 2024
Published: 03 May 2024
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