FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Mode Control of Quasi-PT Symmetry in Laterally Multi-Mode Double Ridge Semiconductor Laser |
Ting Fu1,3, Yu-Fei Wang1,2, Xue-You Wang1,3, Xu-Yan Zhou1, Wan-Hua Zheng1,2,3,4** |
1Laboratory of Solid State Optoelectronics Information technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2College of Future Technology, University of Chinese Academy of Sciences, Beijing 101408 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049 4State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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Cite this article: |
Ting Fu, Yu-Fei Wang, Xue-You Wang et al 2020 Chin. Phys. Lett. 37 044207 |
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Abstract In traditional semiconductor lasers, it is usual to obtain single lateral mode operation by narrowing the ridge of waveguide, which is sensitive to fabrication inaccuracies. To overcome this shortcoming, a quasi-PT (parity-time) symmetric double ridge semiconductor laser is proposed to reach single lateral mode operation for an intrinsic multi-mode stripe laser. The coupled mode theory is used to analyze the non-Hermitian modulation of the gain (or loss) of the PT symmetric double ridge laser to obtain the coupling coefficient between the two ridge waveguides. Finally, the mode field distributions of the quasi-PT symmetric double ridge laser are simulated before and after the spontaneous PT symmetry breaking, which keep the laser operating in single lateral mode.
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Received: 30 December 2019
Published: 24 March 2020
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PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.Fc
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(Modulation, tuning, and mode locking)
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11.30.Er
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(Charge conjugation, parity, time reversal, and other discrete symmetries)
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Fund: Supported by the National Key R&D Program of China (Grant Nos. 2016YFB0401804 and 2016YFA0301102), and the National Natural Science Foundation of China (Grant Nos. 91850206, 61535013, and 11981260014). |
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