| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Influence of Hot-Carriers on the On-State Resistance in Si and GaAs Photoconductive Semiconductor Switches Working at Long Pulse Width |
| Chong-Biao Luan, Hong-Tao Li** |
Key Laboratory of Pulsed Power, Institute of Fluid Physics, China Academy of Engineering Physics, P. O. Box 919-108, Mianyang 621900
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| Cite this article: |
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Chong-Biao Luan, Hong-Tao Li 2020 Chin. Phys. Lett. 37 044203 |
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Abstract We demonstrate that the transport of hot carriers may result in the phenomenon where an oscillated output current appears at the waveforms in a high-power photoconductive semiconductor switch (PCSS) working at long pulse width when the laser disappears or the electric field changes. The variational laser and electric field will affect the scattering rates of hot carriers and crystal lattice in high-power PCSS, and the drift velocity of hot carriers and also the on-state resistance will be changed. The present result is important for reducing the on-state resistance and improving the output characteristics of high-power Si/GaAs PCSS.
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Received: 16 November 2019
Published: 24 March 2020
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| PACS: |
42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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85.30.Fg
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(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
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| Fund: Supported by the Rector's Fund of China Academy of Engineering Physics (Grant No. YZJJLX2016002), and the National Natural Science Foundation of China (Grant Nos. 61504127 and U1530128). |
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