| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Distinct Three-Level Spin–Orbit Control Associated with Electrically Controlled Band Swapping |
| Yu Suo1,2†, Hao Yang1†, and Jiyong Fu1,3,4* |
1Department of Physics, Qufu Normal University, Qufu 273165, China
2Department of Physics, Jining University, Qufu 273155, China
3Instituto de Fı́sica, Universidade de Brası́lia, Brası́lia-DF 70919-970, Brazil
4Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan 250358, China
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| Cite this article: |
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Yu Suo, Hao Yang, and Jiyong Fu 2020 Chin. Phys. Lett. 37 117101 |
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Abstract We investigate the Rashba and Dressehaus spin–orbit (SO) couplings in an ordinary GaAs/AlGaAs asymmetric double well, which favors the electron occupancy of three subbands $\nu=1,2,3$. Resorting to an external gate, which adjusts the electron occupancy and the well symmetry, we demonstrate distinct three-level SO control of both Rashba ($\alpha_\nu$) and Dresselhaus ($\beta_\nu$) {intraband} terms. Remarkably, as the gate varies, the first-subband SO parameters $\alpha_1$ and $\beta_1$ comply with the usual linear behavior, while $\alpha_2$ ($\beta_2$) and $\alpha_3$ ($\beta_3$) respectively for the second and third subbands interchange the values, triggered by a gate controlled band swapping. This provides a pathway towards fascinating selective SO control in spintronic applications. Moreover, we observe that the {interband} Rashba ($\eta_{\mu\nu}$) and Dresselhaus ($\varGamma_{\mu\nu}$) terms also exhibit contrasting gate dependence. Our results should stimulate experiments probing SO couplings in multi-subband wells and adopting relevant SO features in future spintronic devices.
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Received: 01 July 2020
Published: 08 November 2020
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| PACS: |
71.70.Ej
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(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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81.07.St
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(Quantum wells)
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| Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 11874236 and 11004120), the QFNU Research Fund, and the Research Program of JNXY. |
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