| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content |
| Bin-Xu, Jing-Ping Xu, Lu Liu**, Yong Su |
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
|
|
| Cite this article: |
|
Bin-Xu, Jing-Ping Xu, Lu Liu et al 2018 Chin. Phys. Lett. 35 077302 |
|
|
|
|
Abstract The interfacial and electrical properties of high-$k$ LaTaON gate dielectric Ge metal-oxide-semiconductor (MOS) capacitors with different tantalum (Ta) contents are investigated. Experimental results show that the Ge MOS capacitors with a Ta content of $\sim$30% exhibit the best interfacial and electrical properties, including low interface-state density $(7.6\times10^{11}$ cm$^{-2}$ eV$^{-1}$), small gate-leakage current $(8.32\times10^{-5}$ A/cm$^{2}$) and large equivalent permittivity (22.46). The x-ray photoelectron spectroscopy results confirm that the least GeO$_{x}$ is formed at the Ge surface for the sample with a Ta content of $\sim$30% due to the effective blocking role of Ta against O diffusion and the greatly improved hygroscopicity of LaON.
|
|
|
Received: 29 January 2018
Published: 24 June 2018
|
|
| PACS: |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
73.20.At
|
(Surface states, band structure, electron density of states)
|
| |
71.20.Eh
|
(Rare earth metals and alloys)
|
|
|
| Fund: Supported by the National Natural Science Foundation of China under Grant No 61274112. |
|
|
|
| [1] | Kamata Y 2008 Mater. Today 11 30 | | [2] | Caymax M, Houssa M, Pourtois G, Bellenger F, Martens K, Delabie A and van Elshocht S 2008 Appl. Surf. Sci. 254 6094 | | [3] | Abermann S, Henkel C, Bethge O, Pozzovivo G, Klang P and Bertagnolli E 2010 Appl. Surf. Sci. 256 5031 | | [4] | Xu H X, Xu J P, Li C X and Lai P T 2010 Appl. Phys. Lett. 97 022903 | | [5] | Mavrou G, Tsipas P, Sotiropoulos A, Galata S, Panayiotatos Y, Dimoulas A, Marchiori C and Fompeyrine J 2008 Appl. Phys. Lett. 93 212904 | | [6] | Molle A, Baldovino S, Fanciulli M, Tsoutsou D, Golias E and Dimoulas A 2011 J. Appl. Phys. 110 084504 | | [7] | Lin M H, Lan C K, Chen C C and Wu J Y 2011 Appl. Phys. Lett. 99 182105 | | [8] | Liu L N, Choi H W, Xu J P and Lai P T 2015 Appl. Phys. Lett. 107 213501 | | [9] | Ji F, Xu J P, Huang Y, Liu L and Lai P T 2014 IEEE Trans. Electron Devices 61 3608 | | [10] | Cheng Z X, Xu J P, Liu L, Huang Y, Lai P T and Tang W M 2016 Appl. Phys. Lett. 109 023514 | | [11] | Cheng Z X 2017 PhD Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese) | | [12] | Huang X D, Sin J K O and Lai P T 2012 IEEE Trans. Device Mater. Reliab. 12 306 | | [13] | Hagiwara H, Nagatomo M, Seto C, Ida S and Ishiahara T 2013 Catalysts 3 614 | | [14] | Crist B V 1999 Handbook of Monochromatic XPS Spectra: The Elements of Native Oxides (Chichester: Wiley) | | [15] | Gao Q, Wang S, Ma Y, Tang Y, Giordano C and Antonietti M 2012 Angew. Chem. Int. Ed. 51 961 | | [16] | Sekhar M C, Uthanna S, Martins R, Chandra S J and Elangovan E 2012 IOP Conf. Ser.: Mater. Sci. Eng. 34 012009 | | [17] | Chun W J, Ishikawa A, Fujisawa H, Takata T, Kondo J N, Hara M, Kawai M, Matsumoto Y and Domen K 2003 J. Phys. Chem. B 107 1798 | | [18] | Molle A, Bhuiyan M N K, Tallarida G and Fanciulli M 2006 Appl. Phys. Lett. 89 083504 | | [19] | Ko T S, Shieh J, Yang M C, Lu T C, Kuo H C and Wang S C 2008 Thin Solid Films 516 2934 | | [20] | Perego M, Scarel G, Fanciulli M, Fedushkin I L and Skatova A A 2007 Appl. Phys. Lett. 90 162115 | | [21] | Xie Q, Deng S, Schaekers M, Lin D, Caymax M, Delabie A, Qu X P, Jiang Y L, Deduytsche D and Detavernier C 2012 Semicond. Sci. Technol. 27 074012 | | [22] | Dimoulas A, Tsoutsou D, Panayiotatos Y, Sotiropoulos A, Mavrou G, Galata S F and Golias E 2010 Appl. Phys. Lett. 96 012902 | | [23] | Xu J P, Lai P T, Li C X, Zou X and Chan C L 2006 IEEE Electron Device Lett. 27 439 | | [24] | Terman L M 1962 Solid-State Electron. 5 285 | | [25] | Zhang L, Li H, Guo Y, Tang K, Woicik J, Robertson J and McIntyre P C 2015 ACS Appl. Mater. Interfaces 7 20499 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
