| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Total Ionization Dose Effects on Charge Storage Capability of Al$_{2}$O$_{3}$/HfO$_{2}$/Al$_{2}$O$_{3}$-Based Charge Trapping Memory Cell |
| Yan-Nan Xu1,2, Jin-Shun Bi1**, Gao-Bo Xu1, Bo Li1, Kai Xi1, Ming Liu1, Hai-Bin Wang3, Li Luo4 |
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2University of Chinese Academy of Sciences, Beijing 100049
3School of Internet of Things Engineering, HoHai University, Changzhou 213022
4Beijing Jiaotong University, Beijing 100044
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| Cite this article: |
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Yan-Nan Xu, Jin-Shun Bi, Gao-Bo Xu et al 2018 Chin. Phys. Lett. 35 118501 |
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Abstract Because of the discrete charge storage mechanism, charge trapping memory (CTM) technique is a good candidate for aerospace and military missions. The total ionization dose (TID) effects on CTM cells with Al$_{2}$O$_{3}$/HfO$_{2}$/Al$_{2}$O$_{3}$ (AHA) high-$k$ gate stack structure under in-situ 10 keV x-rays are studied. The $C$–$V$ characteristics at different radiation doses demonstrate that charge stored in the device continues to be leaked away during the irradiation, thereby inducing the shift of flatband voltage ($V_{\rm fb}$). The dc memory window shows insignificant changes, suggesting the existence of good P/E ability. Furthermore, the physical mechanisms of TID induced radiation damages in AHA-based CTM are analyzed.
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Received: 19 July 2018
Published: 23 October 2018
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| PACS: |
85.30.-z
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(Semiconductor devices)
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07.89.+b
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(Environmental effects on instruments (e.g., radiation and pollution effects))
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61.80.-x
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(Physical radiation effects, radiation damage)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 616340084, the Youth Innovation Promotion Association of Chinese Academy of Sciences under Grant No 2014101, the International Cooperation Project of Chinese Academy of Sciences, and the Austrian-Chinese Cooperative R&D Projects under Grant No 172511KYSB20150006. |
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