| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements |
| Zhi-Fu Zhu1,2,3, He-Qiu Zhang4**, Hong-Wei Liang4, Xin-Cun Peng2, Ji-Jun Zou2**, Bin Tang2, Guo-Tong Du1,4,5 |
1School of Physics, Dalian University of Technology, Dalian 116024
2Engineering Research Center of Nuclear Technology Application (Ministry of Education), East China Institute of Technology, Nanchang 330013
3Jiangxi Province Engineering Research Center of New Energy Technology and Equipment (Ministry of Education), East China Institute of Technology, Nanchang 330013
4School of Microelectronics, Dalian University of Technology, Dalian 116024
5State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun 130012
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| Cite this article: |
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Zhi-Fu Zhu, He-Qiu Zhang, Hong-Wei Liang et al 2017 Chin. Phys. Lett. 34 097301 |
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Abstract For the frequency range of 1 kHz–10 MHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage ($C$–$V$) and conductance-frequency-voltage ($G$–$f$–$V$) measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance ($R_{\rm s}$) on high-frequency (5 MHz) capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the $C_{\rm HF}$–$C_{\rm LF}$ capacitance and the conductance method are $2\times10^{12}$ eV$^{-1}$cm$^{-2}$ and $0.94\times10^{12}$ eV$^{-1}$cm$^{-2}$, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.
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Received: 24 April 2017
Published: 15 August 2017
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| PACS: |
73.20.At
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(Surface states, band structure, electron density of states)
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73.40.-c
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(Electronic transport in interface structures)
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73.50.-h
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(Electronic transport phenomena in thin films)
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| Fund: Supported by the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005, the Key Program of National Natural Science Foundation of China under Grant No 41330318, the Key Program of Science and Technology Research of Ministry of Education under Grant No NRE1515, the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006, the Research Foundation of Education Bureau of Jiangxi Province under Grant No GJJ14501, and the Engineering Research Center of Nuclear Technology Application (East China Institute of Technology) Ministry of Education under Grant No HJSJYB2016-1. |
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| [1] | Hirayama H et al 2007 Appl. Phys. Lett. 91 071901 | | [2] | Asif Khan M et al 1994 Appl. Phys. Lett. 65 1121 | | [3] | Nakamura S et al 1994 Appl. Phys. Lett. 64 1687 | | [4] | Khan M A et al 1992 Appl. Phys. Lett. 60 2917 | | [5] | Shur M S 1998 Solid-State Electron. 42 2131 | | [6] | Sharma B L 1984 Metal-Semiconductor Schottky Barrier Junctions and Their Applications (New York: Springer) | | [7] | Lin Y J 2005 Appl. Phys. Lett. 86 122109 | | [8] | Nagaraju G et al 2015 Appl. Phys. A 121 131 | | [9] | Park Y et al 2012 Jpn. J. Appl. Phys. 51 09MK01 | | [10] | Rickert K A, Ellis A B, Kim J K et al 2002 J. Appl. Phys. 92 6671 | | [11] | Siva Pratap Reddy M, Bengi A, Rajagopal Reddy V et al 2015 Superlattices Microstruct. 86 157 | | [12] | Stafford L, Voss L F, Pearton S J et al 2006 Appl. Phys. Lett. 89 10 | | [13] | Voss L F, Stafford L, Thaler G T et al 2007 J. Electron. Mater. 36 384 | | [14] | Yu L S, Qiao D, Jia L et al 2001 Appl. Phys. Lett. 79 4536 | | [15] | Choi Y Y, Kim S, Oh M et al 2015 Superlattices Microstruct. 77 76 | | [16] | Nguyen N D, Germain M, Schmeits M et al 2001 J. Appl. Phys. 90 985 | | [17] | Cowley A M 1966 J. Appl. Phys. 37 3024 | | [18] | Terman L M 1962 Solid-State Electron. 5 285 | | [19] | Kar S and Dahlke W E 1972 Solid-State Electron. 15 221 | | [20] | Castagne R and vapaille A 1971 Surf. Sci. 28 157 | | [21] | Yu L S, Jia L, Qiao D et al 2003 IEEE Trans. Electron Devices 50 292 | | [22] | Shiojima K, Sugahara T and Sakai S 1999 Appl. Phys. Lett. 74 1936 | | [23] | Berglund C N 1966 IEEE Trans. Electron Devices 13 701 | | [24] | Sze S M and Kwok K 2006 Physics of Semiconductor Devices (Hoboken NJ: Wiley) | | [25] | Turut A, Doğan H and Yıldırım N 2015 Mater. Res. Express 2 096304 | | [26] | Nicollian E H and Brews J R 1982 Metal Oxide Semiconductor Physics and Technology (New York: Wiley) | | [27] | Qian F, Kai D, Yu K L et al 2013 Chin. Phys. Lett. 30 127302 | | [28] | Demirezen S Ã 2010 Physica B 405 1130 | | [29] | Doǧan H, Yildirim N, Orak I et al 2015 Physica B 457 48 | | [30] | Zhao M and Liu X Y 2015 Chin. Phys. Lett. 32 048501 |
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