| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Electrical Transport Properties of Type-VIII Sn-Based Single-Crystalline Clathrates (Eu/Ba)$_{8}$Ga$_{16}$Sn$_{30}$ Prepared by Ga Flux Method |
| Shu-Ping Deng1, Feng Cheng1, De-Cong Li2, Yu Tang1, Zhong Chen1, Lan-Xian Shen1, Hong-Xia Liu1, Pei-Zhi Yang, Shu-Kang Deng1** |
1Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology (Ministry of Education), Yunnan Normal University, Kunming 650500
2Photoelectric Engineering College, Yunnan Open University, Kunming 650500
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| Cite this article: |
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Shu-Ping Deng, Feng Cheng, De-Cong Li et al 2017 Chin. Phys. Lett. 34 047401 |
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Abstract Single-crystalline samples of Eu/Ba-filled Sn-based type-VIII clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping. Results indicate that Eu atoms tend to replace Ba atoms. With the increase of the Eu initial content, the carrier density increases and the carrier mobility decreases, which leads to an increase of the Seebeck coefficient. By contrast, the electrical conductivity decreases. Finally, the sample with Eu initial content of $x=0.75$ behaves with excellent electrical properties, which shows a maximal power factor of 1.51 mW$\cdot$m$^{-1}$K$^{-2}$ at 480 K, and the highest $ZT$ achieved is 0.87 near the temperature of 483 K.
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Received: 03 December 2016
Published: 21 March 2017
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| PACS: |
74.25.fg
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(Thermoelectric effects)
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74.25.fc
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(Electric and thermal conductivity)
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 51262032. |
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