Chin. Phys. Lett.  2017, Vol. 34 Issue (2): 028201    DOI: 10.1088/0256-307X/34/2/028201
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
TiO$_{2}$-Loaded WO$_{3}$ Composite Films for Enhancement of Photocurrent Density
Wen-Gui Wang, Li Zhu, Yu-Yan Weng**, Wen Dong**
College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006
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Wen-Gui Wang, Li Zhu, Yu-Yan Weng et al  2017 Chin. Phys. Lett. 34 028201
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Abstract Titanium dioxide (TiO$_{2}$) loaded tungsten trioxide (WO$_{3}$) composite films are prepared by an E-beam vapor system. Associated with the existence of a heterojunction at the interface of TiO$_{2}$ and WO$_{3}$, the prepared TiO$_{2}$-WO$_{3}$ composite film shows enhanced photocurrent density, four times than the pure WO$_{3}$ film illuminated under xenon lamp, and higher incident-photon-to-current conversion efficiency. By varying the initial TiO$_{2}$ film thickness, such composite structures could be optimized to obtain the highest photocurrent density. We believe that thin TiO$_{2}$ films improve the light response and increase the surface roughness of WO$_{3}$ films. Furthermore, the existence of the heterojunction results in the efficient charge carriers' separation, transfer process, and a lower recombination of electron-hole pairs, which is beneficial for the enhancement of photocurrent density.
Received: 05 October 2016      Published: 25 January 2017
PACS:  82.45.Mp (Thin layers, films, monolayers, membranes)  
  81.05.Cy (Elemental semiconductors)  
  84.60.Jt (Photoelectric conversion)  
Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11174137, 11474215 and 21204058, the Natural Science Foundation for the Youth of Jiangsu Province under Grant No BK20130284, and the Priority Academic Program Development of Jiangsu Higher Education Institutions.
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https://cpl.iphy.ac.cn/10.1088/0256-307X/34/2/028201       OR      https://cpl.iphy.ac.cn/Y2017/V34/I2/028201
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Wen-Gui Wang
Li Zhu
Yu-Yan Weng
Wen Dong
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