| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Topological Phase in Non-centrosymmetric Material NaSnBi |
| Xia Dai1, Cong-Cong Le1, Xian-Xin Wu1, Sheng-Shan Qin1, Zhi-Ping Lin1, Jiang-Ping Hu1,2** |
1Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2Collaborative Innovation Center of Quantum Matter, Beijing 100190 |
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| Cite this article: |
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Xia Dai, Cong-Cong Le, Xian-Xin Wu et al 2016 Chin. Phys. Lett. 33 127301 |
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Abstract We predict that a non-centrosymmetric material NaSnBi locates in a three-dimensional non-trivial topological phase under ambient pressure based on first-principle calculations. By deriving the effective model around the ${\it \Gamma}$ point, we find that the topological phase transition is driven by a Rashba spin-orbital coupling through an odd number of pairs of band touch due to a small anisotropic gap caused by quintic dispersion terms. In contrast to conventional topological insulators, the spin texture of the surface Dirac cone is right-handed and the surface states are strikingly different for different surface terminations.
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Received: 07 November 2016
Published: 29 December 2016
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| PACS: |
73.43.-f
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(Quantum Hall effects)
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73.20.-r
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(Electron states at surfaces and interfaces)
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71.15.Mb
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(Density functional theory, local density approximation, gradient and other corrections)
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| Fund: Supported by the National Basic Research Program of China under Grant No 2015CB921300, the National Natural Science Foundation of China under Grant No 11334012, and the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No XDB07000000. |
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