CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
White Light Emission from ZnS:Mn Thin Films Deposited on GaN Substrates by Pulsed Laser Deposition |
Cai-Feng Wang1,2**, Qing-Shan Li1,3**, Ji-Suo Wang1, Feng-Zhou Zhao 3, Li-Chun Zhang3 |
1College of Physics and Engineering, Qufu Normal University, Qufu 273165 2College of Aeronautical Engineering, Binzhou University, Binzhou 256603 3School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025
|
|
Cite this article: |
Cai-Feng Wang, Qing-Shan Li, Ji-Suo Wang et al 2016 Chin. Phys. Lett. 33 076802 |
|
|
Abstract ZnS:Mn thin films are grown on GaN substrates by pulsed laser deposition. The structure, morphology and optical properties are investigated by x-ray diffraction, scanning electron microscopy and photoluminescence (PL). The obtained ZnS:Mn thin films are grown in preferred orientation along $\beta$-ZnS (111) direction corresponding to crystalline structure of cubic phase. The deposition temperature has an obvious effect on the structure, surface morphology and optical properties of ZnS:Mn thin films. PL measurements show that there are two emission bands located at 440 nm and 595 nm when the films are deposited at temperatures from 100$^{\circ}\!$C to 500$^{\circ}\!$C. The relative integrated intensity of the blue emission and orange-red emission is determined by the deposition conditions. At the proper deposition temperature of 300$^{\circ}\!$C, the color coordinate is closest to (0.33, 0.33). The ZnS:Mn films on GaN substrates can exhibit white light emission.
|
|
Received: 19 April 2016
Published: 01 August 2016
|
|
PACS: |
68.55.-a
|
(Thin film structure and morphology)
|
|
78.55.Et
|
(II-VI semiconductors)
|
|
78.67.Pt
|
(Multilayers; superlattices; photonic structures; metamaterials)
|
|
|
|
|
[1] | Fang X S, Zhai T Y, Ujjal K G, Li L, Wu L M, Yoshio B and Dmitri G 2011 Prog. Mater. Sci. 56 175 | [2] | Sajan P, Vinod R and Junaid B M 2015 J. Lumin. 158 110 | [3] | Liu T Z, Ke H, Zhang H, Duo S W, Sun Q, Fei X Y, Zhou G Y, Liu H and Fan L J 2014 Mater. Sci. Semicond. Process. 26 301 | [4] | Díaz-Reyes J, CastilloOjeda R S, Sánchez-Espíndola R, Galván-Arellano M and Zaca-Morán O 2015 Curr. Appl. Phys. 15 103 | [5] | Chelvanathan P, Yusoff Y, Haque F, Akhtaruzzaman M, Alam M M, Alothman Z A, Rashid M J, Sopian K and Amin N 2015 Appl. Surf. Sci. 334 138 | [6] | Lei Y, Chen F F, Li R and Xu J 2014 Appl. Surf. Sci. 308 206 | [7] | Piquette E C, Bandic Z Z, McCaldin J O and McGill T C 1997 J. Vac. Sci. Technol. B 15 1148 | [8] | Chu X Y, Wang X N, Li J H, Yao D, Fang X, Fang F, Wei Z P and Wang X H 2015 Chin. Phys. B 24 067805 | [9] | Cui J Y, Zeng X H, Zhou M, Hu C, Zhang W and Lu J F 2014 J. Lumin. 147 310 | [10] | Tian Y, Zhao Y Z, Tang H Q, Zhou W W, Wang L G and Zhang J 2015 Mater. Lett. 148 151 | [11] | Fang D F, Wang Z P, Dai R C, Zhang Z M and Ding Z J 2014 Chin. Phys. Lett. 31 057801 | [12] | Pan Q W, Yang D D, Zhao Y, Ma Z J, Dong G P and Qiu J R 2013 J. Alloys Compd. 579 300 | [13] | Ma X Y, Song J W and Yu Z S 2011 Thin Solid Films 519 5043 | [14] | Zavyalova L V, Beletski A I and Svechnikov G S 1999 Semicond. Sci. Technol. 14 446 | [15] | Mastio E A, Thomas C B, Cranton W M and Fogarassy E 2000 Appl. Surf. Sci. 157 74 | [16] | Sch?n S, Chaichimansour M, Park W, Yang T and Wagner B K 1997 J. Cryst. Growth 175 598 | [17] | Al-khayatt A H O and Jaafer M D 2014 IOSR J. Appl. Phys. 6 27 | [18] | Yeung K M, Tsang W S, Mak C L and Wong K H 2002 J. Appl. Phys. 92 3636 | [19] | Zhu H J, Wang X M and Gao X Y 2015 J. Korean Phys. Soc. 67 366 | [20] | Kuznetsov M F and Ramazanov P E 1969 Sov. Phys. J. 12 958 | [21] | Luque P A, Villase?or A S, Quevedo-Lopez M A and Olivas A 2014 Chalcogenide Lett. 11 105 | [22] | Hennayaka H M M N and Lee H S 2013 Thin Solid Films 548 86 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|