Chin. Phys. Lett.  2016, Vol. 33 Issue (06): 066802    DOI: 10.1088/0256-307X/33/6/066802
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Optimization of Gas Sensing Performance of Nanocrystalline SnO$_{2}$ Thin Films Synthesized by Magnetron Sputtering
N. Panahi1**, M. T. Hosseinnejad2, M. Shirazi2, M. Ghoranneviss3
1Department of Physics, Bandar Abbas Branch, Islamic Azad University, Bandar Abbas, Iran
2Young Researchers and Elite Club, Science and Research Branch, Islamic Azad University, Tehran, Iran
3Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran
Cite this article:   
N. Panahi, M. T. Hosseinnejad, M. Shirazi et al  2016 Chin. Phys. Lett. 33 066802
Download: PDF(762KB)   PDF(mobile)(KB)   HTML
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Tin oxide (SnO$_{2}$) is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphological and hydrogen gas sensing properties of SnO$_{2}$ thin films synthesized by dc magnetron sputtering. The deposited samples are characterized by XRD, SEM, AFM, surface area measurements and surface profiler. Also the H$_{2}$ gas sensing properties of SnO$_{2}$ deposited samples are performed against a wide range of operating temperature. The XRD analysis demonstrates that the degree of crystallinity of the deposited SnO$_{2}$ films strongly depends on the deposition time. SEM and AFM analyses reveal that the size of nanoparticles or agglomerates, and both average and rms surface roughness is enhanced with the increasing deposition time. Also gas sensors based on these SnO$_{2}$ nanolayers show an acceptable response to hydrogen at various operating temperatures.
Received: 21 February 2016      Published: 30 June 2016
PACS:  68.35.bg (Semiconductors)  
  68.47.Gh (Oxide surfaces)  
  61.05.cp (X-ray diffraction)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/33/6/066802       OR      https://cpl.iphy.ac.cn/Y2016/V33/I06/066802
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
N. Panahi
M. T. Hosseinnejad
M. Shirazi
M. Ghoranneviss
[1]Park S et al 2012 ACS Appl. Mater. Interfaces 4 3650
[2]Chen X, Wong C K Y, Yuan C A and Zhang G 2013 Sens. Actuators B 177 178
[3]Wang B, Zhu L F, Yang Y H, Xu N S and Yang G W 2000 J. Phys. Chem. 112 6643
[4]Kimura Y, Kimura S, Kojima R, Bitoh M, Abe M and Niwano M 2013 Sens. Actuators B 177 1156
[5]Tong P V, Hoa N D, Quang V V, Duy N V and Hieu N V 2013 Sens. Actuators B 183 372
[6]Wongchoosuk C, Wisitsoraat A, Phokharatkul D, Horprathum M, Tuantranont A and Kerdcharoen T 2013 Sens. Actuators B 181 388
[7]Wang L, Kang Y, Liu X, Zhang S and Huang W 2012 Sens. Actuators B 162 237
[8]Ayeshamariam A, Kashif M, Bououdina M, Hashim U, Jayachandran M and Ali M E 2014 Ceram. Int. 40 1321
[9]Xiang C, She Z, Zou Y, Cheng J, Chu H, Qiu S, Zhang H, Sun L and Xu F 2014 Ceram. Int. 40 16343
[10]Zeng W, He Q, Pan K and Wang Y 2013 Physica E 54 313
[11]Wang S, Yang J, Zhang H, Wang Y, Gao X, Wang L and Zhu Z 2015 Sens. Actuators B 207 83
[12]Luo W, Deng J, Fu Q, Zhou D, Hu Y, Gong S and Zheng Z 2015 Sens. Actuators B 217 119
[13]Sankar C, Ponnuswamy V, Manickam M, Mariappan R and Suresh R 2015 Appl. Surf. Sci. 349 931
[14]Yu F, Tang D, Hai K, Luo Z, Chen Y, He X, Peng Y, Yuan H, Zhao D and Yang Y 2010 J. Cryst. Growth 312 220
[15]Talebian N and Jafarinezhad F 2013 Ceram. Int. 39 8311
[16]Khanh L D, Binh B T, Binh L T T and Long N N 2008 J. Korean Phys. Soc. 52 1689
[17]Ao D and Ichimura M 2012 Solid-State Electron. 69 1
[18]Ohodnicki Jr. P R, Natesakhawat S, Baltrus J P, Howard B and Brown T D 2012 Thin Solid Films 520 6243
[19]Korotcenkov G and Cho B K 2012 Sens. Actuators B 161 28
[20]Cullity B D and Stock S R 2001 Elements X-Ray Diffraction (New-Jersey: Prentice Hall) 3
[21]Shen Y, Wang W, Fan A, Wei D, Liu W, Han C, Shen Y, Meng D and San X 2015 Int. J. Hydrogen Energy 40 15773
[22]Gurlo A 2006 ChemPhysChem 7 2041
[23]Shimizu Y and Egashira M 1999 MRS Bull. 24 18
Related articles from Frontiers Journals
[1] Xuguang Wang, Bingyu Xia, Jian Gou, Peng Cheng, Yong Xu, Lan Chen, Kehui Wu. Symmetry Breaking and Reversible Hydrogenation of Two-Dimensional Semiconductor Sn$_{2}$Bi *[J]. Chin. Phys. Lett., 0, (): 066802
[2] Xuguang Wang, Bingyu Xia, Jian Gou, Peng Cheng, Yong Xu, Lan Chen, Kehui Wu. Symmetry Breaking and Reversible Hydrogenation of Two-Dimensional Semiconductor Sn$_{2}$Bi[J]. Chin. Phys. Lett., 2020, 37(6): 066802
[3] Yan Gong, Jingwen Guo, Jiaheng Li, Kejing Zhu, Menghan Liao, Xiaozhi Liu, Qinghua Zhang, Lin Gu, Lin Tang, Xiao Feng, Ding Zhang, Wei Li, Canli Song, Lili Wang, Pu Yu, Xi Chen, Yayu Wang, Hong Yao, Wenhui Duan, Yong Xu, Shou-Cheng Zhang, Xucun Ma, Qi-Kun Xue, Ke He. Experimental Realization of an Intrinsic Magnetic Topological Insulator[J]. Chin. Phys. Lett., 2019, 36(7): 066802
[4] Gaoyuan Jiang, Yang Feng, Weixiong Wu, Shaorui Li, Yunhe Bai, Yaoxin Li, Qinghua Zhang, Lin Gu, Xiao Feng, Ding Zhang, Canli Song, Lili Wang, Wei Li, Xu-Cun Ma, Qi-Kun Xue, Yayu Wang, Ke He. Quantum Anomalous Hall Multilayers Grown by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2018, 35(7): 066802
[5] Si-Min Huang, Bo Qian, Ruo-Xi Shen, Yong-Lin Xie. Nonlinear Doping, Chemical Passivation and Photoluminescence Mechanism in Water-Soluble Silicon Quantum Dots by Mechanochemical Synthesis[J]. Chin. Phys. Lett., 2018, 35(3): 066802
[6] Xin-Yi Yang, Guan-Yong Wang, Chen-Xiao Zhao, Zhen Zhu, Lu Dong, Ai-Min Li, Yang-Yang Lv, Shu-Hua Yao, Yan-Bin Chen, Dan-Dan Guan, Yao-Yi Li, Hao Zheng, Dong Qian, Canhua Liu, Yu-Lin Chen, Jin-Feng Jia. Surface Structure and Reconstructions of HgTe (111) Surfaces[J]. Chin. Phys. Lett., 2018, 35(2): 066802
[7] HE Xiao-Min, CHEN Zhi-Ming, LI Lian-Bi. Relaxation of 6H-SiC (0001) Surface and Si Adsorption on 6H-SiC (0001): an ab initio Study[J]. Chin. Phys. Lett., 2015, 32(03): 066802
[8] LIU Xiao-Juan, CAO Wen-Qiang, HUANG Zi-Han, YUAN Jie, FANG Xiao-Yong, CAO Mao-Sheng. Electronic Structures and Adsorption of Li-Doped Graphenes for CO[J]. Chin. Phys. Lett., 2015, 32(03): 066802
[9] LUO Jie-Xin, CHEN Jing, CHAI Zhan, L Kai, HE Wei-Wei, YANG Yan, WANG Xi. The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects[J]. Chin. Phys. Lett., 2014, 31(12): 066802
[10] FENG Xiang-Xu, LIU Nai-Xin, ZHANG Ning, WEI Tong-Bo, WANG Jun-Xi, LI Jin-Min. Effect of Stress in GaN/AlInGaN Grown on GaN Templates with Different Stress States[J]. Chin. Phys. Lett., 2014, 31(05): 066802
[11] SUN Bing, CHANG Hu-Dong, LU Li, LIU Hong-Gang, WU De-Xin. High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy[J]. Chin. Phys. Lett., 2012, 29(3): 066802
[12] MENG Xiu-Qing**, FANG Yun-Zhang, WU Feng-Min. Amphiphilic Bio-molecules/ZnO Interface: Enhancement of Bio-affinity and Dispersibility[J]. Chin. Phys. Lett., 2012, 29(1): 066802
[13] LIU Yan, AO Zhi-Min**, WANG Tao**, WANG Wen-Bo, SHENG Kuang, YU Bin, . Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field[J]. Chin. Phys. Lett., 2011, 28(8): 066802
[14] ZHONG Ze, SUN Li-Jie, CHEN Xiao-Qing, WU Xiao-Peng, FU Zhu-Xi. Effect of Zn Interstitials on Enhancing Ultraviolet Emission of ZnO Films Deposited by MOCVD[J]. Chin. Phys. Lett., 2010, 27(9): 066802
[15] FU Ying-Shuang, JI Shuai-Hua, ZHANG Tong, CHEN Xi, JIA Jin-Feng, XUE Qi-Kun, MA Xu-Cun . Modifying Quantum Well States of Pb Thin Films via Interface Engineering[J]. Chin. Phys. Lett., 2010, 27(6): 066802
Viewed
Full text


Abstract