| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Effect of Quasi-Fermi Level on the Degree of Electron Spin Polarization in GaAs |
| Li-Hua Teng, Li-Jun Mu, Xia Wang** |
Optoelectronic Materials and Technologies Engineering Laboratory of Shandong, Department of Physics, Qingdao University of Science and Technology, Qingdao 266061
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| Cite this article: |
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Li-Hua Teng, Li-Jun Mu, Xia Wang 2016 Chin. Phys. Lett. 33 064206 |
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Abstract With spin-polarized-dependent band gap renormalization effect taken into account, the energy-dependent evolution of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 10 K. We consider the exciting light with right-handed circular polarization, and the calculation results show that the degree of electron spin polarization is dependent strongly on the quasi-Fermi levels of $|1/2\rangle$ and $|-1/2\rangle$ spin conduction bands. At room temperature, the degree of electron spin polarization decreases sharply from 1 near the bottom of the conduction band, and then increases to a stable value above the quasi-Fermi level of the $|-1/2\rangle$ band. The greater the quasi-Fermi level is, the higher the degree of electron spin polarization with excessive energy above the quasi-Fermi level of the $|-1/2\rangle$ band can be achieved. At low temperature, the degree of electron spin polarization decreases from 1 sharply near the bottom of the conduction band, and then increases with the excessive energy, and in particular, up to a maximum of 1 above the quasi-Fermi level of the $|1/2\rangle$ band.
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Received: 13 January 2016
Published: 30 June 2016
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| PACS: |
42.50.Md
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(Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency)
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78.20.Ls
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(Magneto-optical effects)
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78.47.-p
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(Spectroscopy of solid state dynamics)
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