| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Method for Preparation of Ordered Porous Silicon Based on a 2D SiO$_{2}$ Template |
| Ying Wu1, Xiao-Xia Zhai2, Cong-Mian Zhen1**, Xiao-Wei Liu1, Li Ma1, Deng-Lu Hou1 |
1Hebei Advanced Thin Films Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang 050024
2Shijiazhuang Institute of Technology, Shijiazhuang 050228
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| Cite this article: |
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Ying Wu, Xiao-Xia Zhai, Cong-Mian Zhen et al 2016 Chin. Phys. Lett. 33 058103 |
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Abstract A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid–hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO$_{2}$ layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.
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Received: 06 January 2016
Published: 31 May 2016
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| PACS: |
81.65.Cf
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(Surface cleaning, etching, patterning)
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78.67.Rb
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(Nanoporous materials)
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72.15.Jf
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(Thermoelectric and thermomagnetic effects)
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