| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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B–C Bond in Diamond Single Crystal Synthesized with h-BN Additive at High Pressure and High Temperature |
| Yong Li1,3,4, Zhen-Xiang Zhou2**, Xue-Mao Guan3, Shang-Sheng Li3, Ying Wang1, Xiao-Peng Jia5, Hong-An Ma5 |
1Physical and Applied Engineering Department, Tongren University, Tongren 554300
2Beijing Sinoma Synthetic Crystals Co., Ltd, Beijing 100018
3School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000
4Institute of Cultural and Technological Industry Innovation of Tongren, Tongren 554300
5State Key Lab of Superhard Materials, Jilin University, Changchun 130012
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| Cite this article: |
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Yong Li, Zhen-Xiang Zhou, Xue-Mao Guan et al 2016 Chin. Phys. Lett. 33 028101 |
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Abstract The synthesis of diamond single crystal in the Fe$_{64}$Ni$_{36}$-C system with h-BN additive is investigated at pressure 6.5 GPa and temperature range of 1300–1400$^{\circ}\!$C. The color of the obtained diamond crystals translates from yellow to dark green with increasing the h-BN addition. Fourier-transform infrared (FTIR) results indicate that $sp^{2}$ hybridization B-N-B and B-N structures generate when the additive content reaches a certain value in the system. The two peaks are located at 745 and 1425 cm$^{-1}$, respectively. Furthermore, the FTIR characteristic peak resulting from nitrogen pairs is noticed and it tends to vanish when the h-BN addition reaches 1.1 wt%. Furthermore, Raman peak of the synthesized diamond shifts down to a lower wavenumber with increasing the h-BN addition content in the synthesis system.
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Received: 15 November 2015
Published: 26 February 2016
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| PACS: |
81.05.uj
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(Diamond/nanocarbon composites)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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52.80.Pi
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(High-frequency and RF discharges)
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47.11.Fg
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(Finite element methods)
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47.15.Cb
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(Laminar boundary layers)
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