| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Analysis of Capacitance-Voltage-Temperature Characteristics of GaN High-Electron-Mobility Transistors |
| ZHAO Miao**, LIU Xin-Yu** |
Laboratory of Microwave Device and Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
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| Cite this article: |
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ZHAO Miao, LIU Xin-Yu 2015 Chin. Phys. Lett. 32 048501 |
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Abstract The capacitance-voltage characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTS) are measured in the temperature range of 223–398 K. The dependence of capacitance on frequency at various temperatures is analyzed. At lower temperatures, the capacitance decreases only very slightly with frequency. At higher frequencies the curves for all temperatures tend to one capacitance value. Such behavior can be attributed to the interface states or the dislocations.
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Received: 10 January 2015
Published: 30 April 2015
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| PACS: |
85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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