Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF<sub>6</sub>/CF<sub>4</sub> Cyclic Etching for Ge Fin Fabrication

doi:10.1088/0256-307X/32/4/045202

Chin. Phys. Lett.

2015, Vol. 32

Issue (4): 045202 DOI: 10.1088/0256-307X/32/4/045202

PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES

Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF₆/CF₄ Cyclic Etching for Ge Fin Fabrication

MA Xue-Zhi¹, ZHANG Rui², SUN Jia-Bao², SHI Yi¹, ZHAO Yi^1,2,3**

¹School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
²Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027
³State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027

Cite this article:

MA Xue-Zhi, ZHANG Rui, SUN Jia-Bao et al 2015 Chin. Phys. Lett. 32 045202

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Abstract An SF₆/CF₄ cyclic reactive-ion etching (RIE) method is proposed to suppress the surface roughness and to optimize the morphology of Ge fin, aiming at the fabrication of superior Ge FinFETs for future CMOS technologies. The surface roughness of the Ge after RIE can be sufficiently reduced by introducing SF₆-O₂ etching steps into the CF₄-O₂ etching process, while maintaining a relatively large ratio of vertical etching over horizontal etching of the Ge. As a result, an optimized rms roughness of 0.9 nm is achieved for Ge surfaces after the SF₆/CF₄ cyclic etching with a ratio of greater than four for vertical etching over horizontal etching of the Ge, by using a proportion of 60% for SF₆-O₂ etching steps.

Received: 25 January 2015 Published: 30 April 2015

PACS:	52.77.Bn	(Etching and cleaning)
	68.35.Ct	(Interface structure and roughness)
	85.30.Tv	(Field effect devices)
	72.80.Cw	(Elemental semiconductors)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/4/045202 OR https://cpl.iphy.ac.cn/Y2015/V32/I4/045202

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	MA Xue-Zhi
	ZHANG Rui
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[1] Takagi S, Mizuno T, Tezuka T et al 2003 IEEE Int. Electron. Devices Meeting p 57
[2] Auth C, Allen C, Blattner A et al 2012 IEEE Symposia VLSI Technol. Circuits (Hawaii 11–15 June 2012)
[3] Ruch J G 1972 IEEE Trans. Electron Devices 19 652
[4] Yu W, Nowak C H J, Noda K and Hu C 1997 IEEE Trans. Electron Devices 44 627
[5] Zhao Y, Takenaka M and Takagi S 2009 IEEE Trans. Electron Devices 56 1152
[6] Zhao Y, Takenaka M and Takagi S 2009 IEEE Electron Device Lett. 30 987
[7] http://www.itrs.net/Links/2013ITRS/Summary2013.htm
[8] Shang H, Frank M M, Gusev E P, Chu J O, Bedell S W, Guarini K W and Ieong M 2006 IBM J. Res. Develop. 50 377
[9] Saraswat K C, Chui C O, Krishnamohan T, Nayfeh A and McIntyre P 2005 Microelectron. Eng. 80 15
[10] Wang H J, Han G Q, Liu Y, Yan J, Zhang C F, Zhang J C and Hao Y 2014 Chin. Phys. Lett. 31 058503
[11] Duriez B, Vellianitis G, van Dal M J H et al 2012 IEEE Int. Electron. Devices Meeting (San Francisco CA 10–13 December 2012) p 523
[12] Dal M J H van, Vellianitis G, Doornbos G et al 2013 IEEE Int. Electron. Devices Meeting (Washington D.C 09–11 December 2013) p 521
[13] Yu W B, Nowak C H J, Noda K and Hu C 1997 IEEE Trans. Electron Devices 44 627
[14] Huang X, Lee W C, Kuo C, Hisamoto D et al 1999 IEEE Int. Electron. Devices Meeting (Washington D.C 5–8 December 1999) p 67
[15] Hisamoto D, Lee W C, Kedzierski J et al 2000 IEEE Trans. Electron Devices 47 2320
[16] Duriez B, Vellianitis G, van Dal M J H et al 2013 IEEE Int. Electron. Devices Meeting (Washington D.C 09–11 December 2013) p 2011
[17] Wang J C, Du G, Wei K L et al 2012 Chin. Phys. B 21 117308
[18] Zhang R, Yu X, Takenaka M and Takagi S 2014 IEEE Trans. Electron Devices 61 2316
[19] Lee C H, Nishimura T, Tabata T, Lu C, Zhang W F, Nagashio K and Toriumi A 2013 IEEE Int. Electron. Devices Meeting (Washington DC 09–11 December 2013) p 33
[20] Lee C H, Liu C, Tabata T, Nishimura T, Nagashio K and Toriumi A 2013 IEEE Symposia VLSI Technol. Circuits (Taipei 22–24 April 2013) p 28
[21] Liu B, Gong X, Zhan C, Han G, Chin H C et al 2013 IEEE Trans. Electron Devices 60 1852
[22] Onsia B, Conard T, de Gendt S et al 2004 7th Int. Symp. UCPSS (Brussels Belgium 20–22 September 2004) p 20
[23] Shamiryan D, Redolfi A and Boullart W 2009 Microelectron. Eng. 86 96
[24] Oehrlein G S, Bestwick T D, Jones P L, Jaso M A and Lindstr?m J L 1991 J. Electronchem. Soc. 138 1443
[25] Dal M J H van, Vellianitis G, Doornbos G et al 2012 IEEE Int. Electron. Devices Meeting (San Francisco CA 10–13 December 2012) p 521
[26] Qin J Y, Du G and Liu X Y 2013 Chin. Phys. B 22 107104
[27] Wang J X, Yang S Y, Wang J et al 2013 Chin. Phys. B 22 077305
[28] Baravelli E, Marchi L D and Speciale N 2009 Solid-State Electron. 53 1303
[29] Kim T S, Yang H Y, Kil Y H, Jeong T S, Kang S and Shim K H 2009 J. Korean Phys. Soc. 54 2290
[30] Shim K, Yang H, Kil Y, Yang H, Yang J, Hong W, Kang S, Jeong T and Kim T 2012 Electron. Mater. Lett. 8 423
[31] Campo A, Cardinaud C and Turban G 1995 J. Vac. Sci. Technol. B 13 235

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