| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Growth and Characterization of InAs1?xSbx with Different Sb Compositions on GaAs Substrates |
| SUN Qing-Ling1,2, WANG Lu1,2,3**, WANG Wen-Qi1,2, SUN Ling1,2, LI Mei-Cheng3, WANG Wen-Xin1,2, JIA Hai-Qiang1,2, ZHOU Jun-Ming1,2, CHEN Hong1,2 |
1Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190
3State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University, Beijing 102206
|
|
| Cite this article: |
|
SUN Qing-Ling, WANG Lu, WANG Wen-Qi et al 2015 Chin. Phys. Lett. 32 106801 |
|
|
|
|
Abstract InAs1?xSbx with different compositions is grown by molecular beam epitaxy on (100)-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.
|
|
|
Received: 25 May 2015
Published: 30 October 2015
|
|
| PACS: |
68.37.-d
|
(Microscopy of surfaces, interfaces, and thin films)
|
| |
61.05.-a
|
(Techniques for structure determination)
|
| |
81.15.-z
|
(Methods of deposition of films and coatings; film growth and epitaxy)
|
| |
81.05.Ea
|
(III-V semiconductors)
|
|
|
|
|
|
[1] Kim J D, Wu D, Wojkowski J, Piotrowski J, Xu J and Razeghi M 1996 Appl. Phys. Lett. 68 99
[2] Rakovska A, Berger V, Marcadet X, Vinter B, Glastre G, Oksenhendler T and Kaplan D 2000 Appl. Phys. Lett. 77 397
[3] Kim J D, Kim S, Wu D, Wojkowski J, Xu J, Piotrowski J, Bigan E and Razeghi M 1995 Appl. Phys. Lett. 67 2645
[4] Khoshakhlagh A, Myers S, Plis E, Kutty M N, Klein B, Gautam N, Kim H, Smith E P G, Rhiger D, Johnson S M and Krishna S 2010 Proc. SPIE 7660 76602Z-1
[5] Myers S A, Khoshakhlagh A, Mailfert J, Wanninkhof P, Plis E, Kutty M N, Kim H S, Gautam, N, Klein B, Smith E P G and Krishna S 2010 Proc. SPIE 7808 780805
[6] Yen M Y, People R and Wecht K W 1988 J. Appl. Phys. 64 952
[7] Besikci C, Choi Y H, Labeyrie G, Bigan E, Razeghi M, Cohen J B, Carsello J and Dravid V P 1994 J. Appl. Phys. 76 5820
[8] Cheung D T, Andrews A M, Gertner E R, Williams G M, Clarke J E, Pasko J G and Longo J T 1977 Appl. Phys. Lett. 30 587
[9] Tsukamoto S, Bhattacharya P, Chen Y C and Kim J H 1990 J. Appl. Phys. 67 6819
[10] Rakovska A, Berger V, Marcadet X, Vinter B, Bouzehouane K and Kaplan D 2000 Semicond. Sci. Technol. 15 34
[11] Marciniak M A, Hengehold R L, Yeo Y K and Turner G W 1998 J. Appl. Phys. 84 480
[12] Li L K, Hsu Y and Wang W I 1993 J. Vac. Sci. Technol. B 11 872
[13] Ballal A K, Salamanca-Riba L, Partin D L, Heremans J, Green L and Fuller B K 1993 J. Electron. Mater. 22 383
[14] Miyoshi H, Suzuki R, Amano H and Horikoshi Y 2002 J. Cryst. Growth 237 1519
[15] Gao H C, Wang W X, Jiang Z W, Liu L S, Zhou J M and Chen H 2007 J. Cryst. Growth 308 406
[16] Snyder C W, Orr B G, Kessler D and Sander L M 1991 Phys. Rev. Lett. 66 3032
[17] Belk J G, Pashley D W, McConville C F, Joyce B A and Jones T S 1998 Surf. Sci. 410 82
[18] Pan Z, Wang Y T, Li L H, Wang H, Wei Z, Zhou Z Q and Lin Y W 1999 J. Appl. Phys. 86 5302
[19] Matthews J W and Blakeslee A E 1974 J. Cryst. Growth 27 118
[20] Maimon S and Wicks G W 2006 Appl. Phys. Lett. 89 151109
[21] Weiss E, Klin O, Grossmann S, Snapi N, Lukomsky I, Aronov D, Yassen M, Berkowicz E, Glozman A, Klipstein P, Fraenkel A and Shtrichman I 2012 J. Cryst. Growth 339 31
[22] Craig A P, Marshall A R J, Tian Z B and Krishna S 2014 Infrared Phys. Technol. 67 210 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
