Chin. Phys. Lett.  2015, Vol. 32 Issue (08): 088503    DOI: 10.1088/0256-307X/32/8/088503
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes
LIU Fei1,2, YANG Sen1,2, ZHOU Dong1,2, LU Hai1,2**, ZHANG Rong1,2, ZHENG You-Dou1,2
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093
Cite this article:   
LIU Fei, YANG Sen, ZHOU Dong et al  2015 Chin. Phys. Lett. 32 088503
Download: PDF(603KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed.
Received: 17 March 2015      Published: 02 September 2015
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  85.60.Dw (Photodiodes; phototransistors; photoresistors)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/32/8/088503       OR      https://cpl.iphy.ac.cn/Y2015/V32/I08/088503
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
LIU Fei
YANG Sen
ZHOU Dong
LU Hai
ZHANG Rong
ZHENG You-Dou
[1] Shaw G A, Siegel A M, Model J and Greisokh D 2005 Proc. SPIE 5796 214
[2] Cova S, Lacaita A, Ghioni M, Ripamonti G and Louis T 1989 Rev. Sci. Instrum. 60 1104
[3] Cicek E, Vashaei Z, McClintock R, Bayram C and Razeghi M 2010 Appl. Phys. Lett. 96 261107
[4] Shen S, Zhang Y, Yoo D, Limb J, Ryou J, Yoder and Dupuis 2007 IEEE Photon. Technol. Lett. 19 1744
[5] Zhou Q G, McIntosh D, Liu H D and Campbell J C 2011 IEEE Photon. Technol. Lett. 23 299
[6] Hu J, Xin X B, Zhao J H, VanMil B L, Myers-Ward R, Eddy C and Gaskill D K 2011 IEEE Trans. Nucl. Sci. 58 3343
[7] Cha H Y, Sung H K, Kim H, Cho C H and Sandvik P M 2010 IEICE Trans. Electron. E93C 648
[8] Zhou D, Liu F, Lu H, Chen D J, Ren F F, Zhang R and Zheng Y D 2014 IEEE Photon. Technol. Lett. 26 1136
[9] Cova S, Ghioni M, Lacaita A, Samori C and Zappa F 1996 Appl. Opt. 35 1956
[10] Hu J, Xin X, Li X, Zhao J H, VanMil B L, Lew K K, Myers-Ward R, Eddy C and Gaskill D K 2008 IEEE Trans. Electron Devices 55 1977
[11] Levine B and Bethea C 1984 Appl. Phys. Lett. 44 553
Related articles from Frontiers Journals
[1] Yue Li, Li Zhu, Chunsheng Chen, Ying Zhu, Changjin Wan, and Qing Wan. High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al$_{2}$O$_{3}$/HfO$_{2}$ Dielectrics[J]. Chin. Phys. Lett., 2022, 39(11): 088503
[2] Ming-Liang Zhang , Xu-Ming Zou , and Xing-Qiang Liu. Surface Modification for WSe$_{2}$ Based Complementary Electronics[J]. Chin. Phys. Lett., 2020, 37(11): 088503
[3] Wen-Jian Shi, Ze-Ming Kan, Chuan-Hui Cheng, Wen-Hui Li, Hang-Qi Song, Meng Li, Dong-Qi Yu, Xiu-Yun Du, Wei-Feng Liu, Sheng-Ye Jin, and Shu-Lin Cong. Antimony Selenide Thin Film Solar Cells with an Electron Transport Layer of Alq$_{3}$[J]. Chin. Phys. Lett., 2020, 37(10): 088503
[4] Bojing Lu, Rumin Liu, Siqin Li, Rongkai Lu, Lingxiang Chen, Zhizhen Ye, and Jianguo Lu. Room-Temperature Processed Amorphous ZnRhCuO Thin Films with p-Type Transistor and Gas-Sensor Behaviors[J]. Chin. Phys. Lett., 2020, 37(9): 088503
[5] Hang Yang, Wei Chen, Ming-Yang Li, Feng Xiong, Guang Wang, Sen Zhang, Chu-Yun Deng, Gang Peng, and Shi-Qiao Qin. Ultrathin Al Oxide Seed Layer for Atomic Layer Deposition of High-$\kappa$ Al$_{2}$O$_{3}$ Dielectrics on Graphene[J]. Chin. Phys. Lett., 2020, 37(7): 088503
[6] Lin-Lin Su , Dong Zhou, Qing Liu , Fang-Fang Ren , Dun-Jun Chen , Rong Zhang , You-Dou Zheng , Hai Lu. Effect of a Single Threading Dislocation on Electrical and Single Photon Detection Characteristics of 4H-SiC Ultraviolet Avalanche Photodiodes[J]. Chin. Phys. Lett., 2020, 37(6): 088503
[7] Yang Jiang, Ze-Yu Wan, Guang-Nan Zhou, Meng-Ya Fan, Gai-Ying Yang, R. Sokolovskij, Guang-Rui Xia, Qing Wang, Hong-Yu Yu. A Novel Oxygen-Based Digital Etching Technique for p-GaN/AlGaN Structures without Etch-Stop Layers[J]. Chin. Phys. Lett., 2020, 37(6): 088503
[8] Lin-Lin Su , Dong Zhou, Qing Liu , Fang-Fang Ren , Dun-Jun Chen , Rong Zhang , You-Dou Zheng , Hai Lu. Effect of a Single Threading Dislocation on Electrical and Single Photon Detection Characteristics of 4H-SiC Ultraviolet Avalanche Photodiodes *[J]. Chin. Phys. Lett., 0, (): 088503
[9] Yang Jiang, Ze-Yu Wan, Guang-Nan Zhou, Meng-Ya Fan, Gai-Ying Yang, R. Sokolovskij, Guang-Rui Xia, Qing Wang, Hong-Yu Yu. A Novel Oxygen-Based Digital Etching Technique for p-GaN/AlGaN Structures without Etch-Stop Layers *[J]. Chin. Phys. Lett., 0, (): 088503
[10] Bin Wang, Hao-Yu Kong, Lei Sun. Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSi$_{x}$/CoSi$_{2}$/Si Stack Interface[J]. Chin. Phys. Lett., 2020, 37(3): 088503
[11] Ashkan Horri, Rahim Faez. Full-Quantum Simulation of Graphene Self-Switching Diodes[J]. Chin. Phys. Lett., 2019, 36(6): 088503
[12] Junkang Li, Yiming Qu, Siyu Zeng, Ran Cheng, Rui Zhang, Yi Zhao. Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain[J]. Chin. Phys. Lett., 2018, 35(11): 088503
[13] Li-Hua Dai, Da-Wei Bi, Zheng-Xuan Zhang, Xin Xie, Zhi-Yuan Hu, Hui-Xiang Huang, Shi-Chang Zou. Metastable Electron Traps in Modified Silicon-on-Insulator Wafer[J]. Chin. Phys. Lett., 2018, 35(5): 088503
[14] Jie Fan, Sheng-Ming Sun, Hai-Zhu Wang, Yong-Gang Zou. Low Specific On-Resistance SOI LDMOS with Non-Depleted Embedded P-Island and Dual Trench Gate[J]. Chin. Phys. Lett., 2018, 35(3): 088503
[15] Yi Zhang, Gen-Quan Han, Yan Liu, Huan Liu, Jin-Cheng Zhang, Yue Hao. Ohmic Contact at Al/TiO$_{2}$/n-Ge Interface with TiO$_{2}$ Deposited at Extremely Low Temperature[J]. Chin. Phys. Lett., 2018, 35(2): 088503
Viewed
Full text


Abstract