| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs |
| ZHANG Chun-Wei1, LIU Si-Yang1, SUN Wei-Feng1**, ZHOU Lei-Lei1, ZHANG Yi1, SU Wei2, ZHANG Ai-Jun2, LIU Yu-Wei2, HU Jiu-Li2, HE Xiao-Wei2 |
1National ASIC System Engineering Technology Research Center, Southeast University, Nanjing 210096
2CSMC Technologies Corporation, Wuxi 214028
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| Cite this article: |
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ZHANG Chun-Wei, LIU Si-Yang, SUN Wei-Feng et al 2015 Chin. Phys. Lett. 32 088502 |
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Abstract The dependencies of hot-carrier-induced degradations on the effective channel length Lch, eff are investigated for n-type metal-oxide-semiconductor field effect transistor (MOSFETs). Our experiments find that, with decreasing Lch, eff, the saturation drain current (Idsat) degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch, eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the Idsat degradation with Lch, eff reducing.
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Received: 08 April 2015
Published: 02 September 2015
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| PACS: |
85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.-z
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(Semiconductor devices)
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