| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator |
| WANG Hui-Tao, ZHOU Dai-Bing, ZHANG Rui-Kang, LU Dan, ZHAO Ling-Juan, ZHU Hong-Liang, WANG Wei, JI Chen** |
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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WANG Hui-Tao, ZHOU Dai-Bing, ZHANG Rui-Kang et al 2015 Chin. Phys. Lett. 32 084203 |
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Abstract We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f?3 dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.
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Received: 03 April 2015
Published: 02 September 2015
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| PACS: |
42.79.Hp
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(Optical processors, correlators, and modulators)
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81.07.St
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(Quantum wells)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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