| GENERAL |
|
|
|
|
Low Gate Voltage Operated Multi-emitter-dot H+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor |
| YUAN Heng1,2**, ZHANG Ji-Xing2, ZHANG Chen1,2, ZHANG Ning1,2, XU Li-Xia1,2, DING Ming1,2, Patrick J. Clarke1 |
1Science and Technology on Inertial Laboratory, Beihang University, Beijing 100191
2School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191
|
|
| Cite this article: |
|
YUAN Heng, ZHANG Ji-Xing, ZHANG Chen et al 2015 Chin. Phys. Lett. 32 020701 |
|
|
|
|
Abstract A low gate voltage operated multi-emitter-dot gated lateral bipolar junction transistor (BJT) ion sensor is proposed. The proposed device is composed of an arrayed gated lateral BJT, which is driven in the metal-oxide-semiconductor field-effect transistor (MOSFET)-BJT hybrid operation mode. Further, it has multiple emitter dots linked to each other in parallel to improve ionic sensitivity. Using hydrogen ionic solutions as reference solutions, we conduct experiments in which we compare the sensitivity and threshold voltage of the multi-emitter-dot gated lateral BJT with that of the single-emitter-dot gated lateral BJT. The multi-emitter-dot gated lateral BJT not only shows increased sensitivity but, more importantly, the proposed device can be operated under very low gate voltage, whereas the conventional ion-sensitive field-effect transistors cannot. This special characteristic is significant for low power devices and for function devices in which the provision of a gate voltage is difficult.
|
|
|
Published: 20 January 2015
|
|
| PACS: |
07.07.Df
|
(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
|
| |
07.10.Cm
|
(Micromechanical devices and systems)
|
| |
72.80.Cw
|
(Elemental semiconductors)
|
| |
85.30.-z
|
(Semiconductor devices)
|
|
|
|
|
|
[1] Kang H, Lin L, Rong M and Chen X 2014 Talanta 129 296
[2] Chen M, Jin Y, Qu X, Jin Q and Zhao J 2014 Sens. Actuators B 192 399
[3] Liu Z, Li Y, Ding Y, Yang Z, Wang B, Li Y, Li T, Luo W, Zhu W, Xie J and Wang C 2014 Sens. Actuators B 197 200
[4] Lee C, Chiu Y and Wang X 2013 Sens. Actuators B 181 810
[5] Das A, Ko D H, Chen C H, Chang L B, Lai C S, Chu F C, Chow L and Lin R M 2014 Sens. Actuators B 205 199
[6] Lee C T and Chiu Y S 2014 Sens. Actuators B 203 790
[7] Kargar A 2009 Chin. Phys. Lett. 26 060701
[8] Sawada K, Shimada T, Ohshima T, Takao H and Ishida M 2004 Sens. Actuators B 98 69
[9] Werner C F, Takenaga S, Taki F, Sawada K and Schoning M J 2013 Sens. Actuators B 177 745
[10] Kang B S, Wang H T and Ren F 2007 Appl. Phys. Lett. 91 012110
[11] Dipalo M, Gao Z, Scharpf J, Pietzka C, Alomari M, Medjdoub F, Carlin J F, Grandjean N, Delage S and Kohn E 2009 Diamond Relat. Mater. 18 884
[12] Martinoia S, Grattarola M and Massobrio G 1992 Sens. Actuators B 7 561
[13] Kwon H C, Kwon D H, Sawada K and Kang S W 2008 IEEE Electron Device Lett. 29 1138
[14] Parke S A, Hu C and Ko P K 1993 IEEE Electron Device Lett. 14 234
[15] Yuan H, Kwon H C, Kang B H, Kang I M, Kwon D H and Kang S W 2013 Sens. Actuators B 181 44
[16] Yuan H, Kwon H C, Yeom S H, Kwon D H and Kang S W 2011 Biosens. Bioelectron. 28 434
[17] Yuan H, Kang B H, Lee J S, Jeong H M, Yeom S H, Kim K J, Kwon D H and Kang S W 2013 J. Semicond. Technol. Sci. 13 1
[18] Degrauwe M R, Leuthold O N and Vittoz E A 1985 IEEE J. Solid-State Circuits 20 1151
[19] Pan T W and Abidi A A 1989 IEEE J. Solid-State Circuits 24 951
[20] Yan Z, Deen M J and Malhi D S 1997 IEEE Electron Device Lett. 44 118
[21] Shin K S, Paek K K, Park J H and Kim T S 2007 IEEE Electron Device Lett. 28 581
[22] Kuhnhold R and Ryssel H 2000 Sens. Actuators B 68 307
[23] Dong Z, Wejinya U C and Chalamalasetty S N S 2012 Sens. Actuators A 173 293 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
