Influence of ITO, Graphene Thickness and Electrodes Buried Depth on LED Thermal-Electrical Characteristics Using Numerical Simulation

doi:10.1088/0256-307X/31/2/028501

Chin. Phys. Lett.

2014, Vol. 31

Issue (2): 028501 DOI: 10.1088/0256-307X/31/2/028501

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Influence of ITO, Graphene Thickness and Electrodes Buried Depth on LED Thermal-Electrical Characteristics Using Numerical Simulation

XUE Sheng-Jie¹, FANG Liang^1**, LONG Xing-Ming^2**, LU Yi¹, WU Fang¹, LI Wan-Jun¹, ZUO Jia-Qi², ZHANG Shu-Fang^3**

¹Department of Applied Physics, Chongqing University, Chongqing 401331
²Physics Department, Chongqing Normal University, Chongqing 400047
³College of Software, Chongqing College of Electronic Engineering, Chongqing 401331

Cite this article:

XUE Sheng-Jie, FANG Liang, LONG Xing-Ming et al 2014 Chin. Phys. Lett. 31 028501

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Abstract Finite elements methods are used to investigate the thermal?electrical characteristics of gallium?nitride (GaN) light-emitting diodes (LEDs) with different transparent conductive layers (TCLs) and buried depths of electrodes, where the transparent conductive layers include indium tin oxide (ITO), graphene (Gr) and the combination of them (ITO/Gr). The optimal material parameters and the precision and accuracy of the simulation model are validated. Moreover, the parameters' sensitivity analysis is carried out as well. The results indicate that the LED with the TCL of a 100-nm ITO or 4-layer Gr has a good thermal-electrical performance from the viewpoint of the maximum temperature and the current density deviation of multiple quantum well (MQW), where the maximum temperature occurs at the n-Pad rather than p-Pad. The compound TCL with a 20-nm ITO and 3-layer Gr reaches a thermal-electrical performance better than that of a 100-nm ITO or 4-layer Gr. Moreover, their maximum temperatures decrease about -0.43% and 1.21%, and the current density uniformities increase up to -6.09% and 17.41%, respectively. Furthermore, when the electrode buried depth is 0.51 μm, the thermal-electrical performance of the GaN LEDs can be further improved.

Received: 16 September 2013 Published: 28 February 2014

PACS:	85.30.-z	(Semiconductor devices)
	66.70.Df	(Metals, alloys, and semiconductors)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/31/2/028501 OR https://cpl.iphy.ac.cn/Y2014/V31/I2/028501

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	XUE Sheng-Jie
	FANG Liang
	LONG Xing-Ming
	LU Yi
	WU Fang
	LI Wan-Jun
	ZUO Jia-Qi
	ZHANG Shu-Fang

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