| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of Carrier Gas on Carbon Incorporation in GaN |
| ZHANG Jian-Li, LIU Jun-Lin**, PU Yong, FANG Wen-Qing, ZHANG Meng, JIANG Feng-Yi |
National Engineering and Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047
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| Cite this article: |
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ZHANG Jian-Li, LIU Jun-Lin, PU Yong et al 2014 Chin. Phys. Lett. 31 037102 |
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Abstract GaN epitaxial layers were grown on Si (111) substrates by metal organic chemical vapor deposition. Carbon concentrations in the films grown in different ambients were measured by secondary ion mass spectrometry. The results show that the carbon incorporation is strongly dependent on the H2 flow rate when the NH3 flow rate is small, but insensitive to the H2 flow rate when the NH3 flow rate is sufficient large. We conclude that H2 can inhibit the dissociation of NH3 and result in a less active N source; an insufficiently active N source causes more N vacancies, which enhances carbon incorporation.
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Received: 12 September 2013
Published: 28 February 2014
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| PACS: |
71.55.Eq
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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82.80.Ms
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(Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI))
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