Chin. Phys. Lett.  2014, Vol. 31 Issue (03): 036201    DOI: 10.1088/0256-307X/31/3/036201
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Effect of Tin Incorporation on Thermo-Mechanical Properties of Glassy Se80Te20 Alloy
H. Kumar, A. Sharma, N. Mehta**
Department of Physics, Banaras Hindu University, Varanasi 221005, India
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H. Kumar, A. Sharma, N. Mehta 2014 Chin. Phys. Lett. 31 036201
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Abstract We report an analysis on the hardness behavior of glassy Se80?xTe20Snx alloy. The crucial thermo-mechanical parameters (micro-hardness, volume and formation energy of micro-voids and the modulus of elasticity) are examined. The results indicate that the thermo-mechanical parameters are changed significantly after incorporation of Sn in glassy Se80Te20 alloy.
Received: 17 September 2013      Published: 28 February 2014
PACS:  62.20.Qp (Friction, tribology, and hardness)  
  77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/31/3/036201       OR      https://cpl.iphy.ac.cn/Y2014/V31/I03/036201
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Articles by authors
H. Kumar
A. Sharma
N. Mehta
[1] Mehta N 2006 J. Sci. Ind. Res. 65 777
[2] Mehta N and Kumar A 2013 Rec. Pat. Mater. Sci. 6 59
[3] Saraswat V K, Kishore V, Deepika, Sharma K, Saxena N S and Sharma T P 2007 Chalcogen. Lett. 4 61
[4] Kaur G, Komastu T and Thangaraj R 2000 J. Mater. Sci. 35 903
[5] Kumar S, Husain M and Zulfequar M 2007 J. Mater. Sci. 42 143
[6] Kumar H, Mehta N and Singh K 2009 Phys. Scr. 80 065602
[7] Sharma A, Mehta N and Kumar A 2011 J. Mater. Sci. 46 4509
[8] Sharma A, Mehta N and Kumar A 2011 J. Alloys Compd. 509 3468
[9] Sharma A and Mehta N 2011 Phys. Scr. 84 015605
[10] Kumar H, N Mehta, and K Singh 2011 Phys. Scr. 83 065602
[11] Sharma A and Mehta N 2012 Defect Diffus. Forum 329 165
[12] Kotkata M F 1991 J. Mater. Sci. 26 4869
[13] Elshafie A 1996 J. Phys. D: Appl. Phys. 29 991
[14] Pattanaik A K, Robi P S and Srinivasan A 2003 J. Optoelectron. Adv. Mater. 5 35
[15] Boycheva S V, Vassilev V S and Petkova P 2001 J. Optoelectron. Adv. Mater. 3 503
[16] Imran M, Hussain F, Rashid M and Ahmed S A 2012 Chin. Phys. B 21 126802
[17] He Z B, Yang Z L, Yan J C, Song Z M and Lu T C 2011 Acta Phys. Sin. 60 086803 (in Chinese)
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