| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode with an AlGaInAs/InP Distributed Bragg Reflector |
| YUE Ai-Wen1, WANG Ren-Fan1, XIONG Bing2**, SHI Jing3 |
1Wuhan Telecommunication Devices Co. LTD, Wuhan 430074
2Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084
3Key Lab of Acoustic and Photonic Material and Device of Ministry of Education, Wuhan University, Wuhan 430072
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| Cite this article: |
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YUE Ai-Wen, WANG Ren-Fan, XIONG Bing et al 2013 Chin. Phys. Lett. 30 038501 |
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Abstract A new planar InGaAs/InP avalanche photodiode (APD) is proposed and fabricated, which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector (DBR) to improve its responsivity. The fabricated APD exhibits a low dark current of less than 3 nA at M=10 and high responsivity of 0.92 A/W at M=1. The gain bandwidth product of the device is above 80 GHz. The APD receiver exhibits a sensitivity of over ?26 dBm at BER = 10?12, which is sufficient for 10 Gb/s communication systems.
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Received: 08 August 2012
Published: 29 March 2013
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| PACS: |
85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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