| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template |
| YU Zhi-Guo1, CHEN Peng1,2** YANG Guo-Feng1, LIU Bin1, XIE Zi-Li1, XIU Xiang-Qian1, WU Zhen-Long2, XU Feng2, XU Zhou2, HUA Xue-Mei1, HAN Ping1, SHI Yi1 ZHANG Rong1, ZHENG You-Dou1 |
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 |
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| Cite this article: |
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YU Zhi-Guo, CHEN Peng YANG Guo-Feng, LIU Bin et al 2012 Chin. Phys. Lett. 29 098502 |
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Abstract Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By preparing the self-assemble nanoporous Ni template through rapid annealing of a thin Ni film, followed by a low damage dry etching process, a p-side-up LED with a roughened surface has been fabricated. Compared to a conventional LED with plane surface, the light output of LEDs with nanoporous p-GaN surface increases up to 71% and 36% at applied currents of 1 mA and 20 mA, respectively. Meanwhile, the electrical characteristics are not degraded obviously after surface roughening.
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Received: 18 June 2012
Published: 01 October 2012
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| PACS: |
85.60.Jb
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(Light-emitting devices)
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78.66.Fd
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(III-V semiconductors)
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78.67.Rb
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(Nanoporous materials)
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78.35.+c
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(Brillouin and Rayleigh scattering; other light scattering)
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