| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling |
| CHENG Feng-Feng1 , FA Tao1, WANG Xin-Qiang2, YAO Shu-De1** |
1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871
2State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
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| Cite this article: |
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YAO Shu-De, WANG Xin-Qiang, FA Tao et al 2012 Chin. Phys. Lett. 29 026101 |
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Abstract Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-µm −thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeling (RBS/C) and synchrotron radiation x-ray diffraction (SR-XRD). The minimum yield χmin=2.5% deduced from the RBS/C results indicates a fairly good crystalline quality. From the SR−XRD results, we obtain the values of the screw and edge densities to be ρscrew=7.0027×109 and ρedge=8.6115×109 cm−2, respectively. The tetragonal distortion of the sample is found to be −0.27% by angular scans, which is close to the −0.28% derived by SR-XRD. The value of |e⊥/e|| |=0.6742 implies that the InN layer is much stiffer along the a axis than that along the c axis, where e|| is the parallel elastic strain, and e⊥ is the perpendicular elastic strain. Photoluminescence results reveal a main peak of 0.653 eV with the linewidth of 60 meV, additional shoulder band could be due to impurities and related defects.
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| Keywords:
61.05.cp
61.85.+p
68.55.-a
81.05.Ea
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Received: 15 September 2011
Published: 11 March 2012
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| PACS: |
61.05.cp
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(X-ray diffraction)
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61.85.+p
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(Channeling phenomena (blocking, energy loss, etc.) ?)
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68.55.-a
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(Thin film structure and morphology)
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81.05.Ea
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(III-V semiconductors)
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82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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